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I409-VB Product details

Product introduction:

Product Introduction: I409-VB

The I409-VB is a high-performance single P-channel MOSFET in a TO251 package. It is designed for medium and high power applications and can handle drain-source voltages (VDS) up to -60V and gate drive voltages (VGS) of ±20V. Using advanced trench technology, the I409-VB has an on-resistance as low as 13mΩ at VGS=10V and can withstand a maximum drain current of -50A. The device has good switching performance and high efficiency, making it ideal for various applications in power management and current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -60V -2.5V -50A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -60V -2.5V -50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -60V -2.5V -50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
Detailed parameter description:

1. **Package type**: TO251
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -60V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2.5V
6. **On-resistance (RDS(ON))**:
- 17mΩ @ VGS=4.5V
- 13mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -50A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 80W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 55nC
12. **Reverse recovery time (trr)**: 30ns

Domain and module applications:

Applications and module examples:

1. **DC-DC converter**: The I409-VB can be widely used in DC-DC converters, especially low-dropout linear regulators and buck converters. P-channel MOSFETs act as efficient switches in these applications, ensuring low losses and high conversion efficiency in current transmission.

2. **Power Management Module (PMU)**: The I409-VB is suitable for load switches and reverse current protection circuits in power management systems. Its high current carrying capacity and low on-resistance make it excel in devices that require high current control, such as server power management and industrial control equipment.

3. **Battery protection circuit**: This MOSFET can be used in protection modules for lithium-ion batteries, providing overvoltage, overcurrent and short-circuit protection. Its P-channel structure and low on-resistance enable it to effectively switch the power path and protect the battery from damage.

4. **Power Tools**: The I409-VB performs well in high-power power tools, such as drills and saws. In these applications, the MOSFET controls the power to the motor through its efficient switching characteristics, ensuring high output while reducing power losses.

5. **Automotive Electronics**: The I409-VB is widely used in automotive electronics, especially in low-voltage side power switches such as on-board lighting, power windows and power seats. Its efficient P-channel design enables it to handle higher current loads in automobiles while maintaining high energy efficiency.

The low on-resistance and high current handling capability of the I409-VB make it an ideal choice for applications in power management, converters and automotive electronics, providing stable performance with excellent switching efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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