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I403-VB Product details
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Product Introduction
**I403-VB** is a high-performance P-type MOSFET in TO251 package. Using Trench technology, this MOSFET is designed for high current and low on-resistance applications and can operate stably at a drain-source voltage of -30V. Its excellent switching characteristics and high current handling capability make it very suitable for a variety of high-efficiency power management and switching applications.
**I403-VB** is a high-performance P-type MOSFET in TO251 package. Using Trench technology, this MOSFET is designed for high current and low on-resistance applications and can operate stably at a drain-source voltage of -30V. Its excellent switching characteristics and high current handling capability make it very suitable for a variety of high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -2.5V | -70A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -2.5V | -70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -2.5V | -70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 10.8mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -70A
- **Technology**: Trench technology
- **Package**: TO251
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 10.8mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -70A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
1. **Power management**: The low on-resistance and high current carrying capacity of I403-VB make it excel in power management systems. Especially in DC-DC converters and switching power supplies, this MOSFET can effectively reduce energy loss, improve system efficiency, and ensure the stability and reliability of the power supply.
2. **Battery protection**: Due to its high current handling capability and low RDS(ON), I403-VB is very suitable for use in battery protection circuits. It can effectively control the battery charging and discharging process, prevent overcurrent and short circuit, and thus protect the safety and stability of the battery system.
3. **Motor drive**: In motor drive applications, I403-VB can provide stable and efficient switching operation. Its high current carrying capacity and low on-resistance ensure the efficient operation of the motor control system and is suitable for various motor drive circuits.
4. **Power switch**: This MOSFET is suitable for power switching applications. Due to its low RDS(ON) and high withstand voltage, it can operate stably under high load conditions, ensuring the reliability of the power switching circuit.
5. **Power Amplifier**: In the power amplifier circuit, the low on-resistance and high current handling capability of the I403-VB can reduce power loss and improve the overall efficiency of the amplifier. This makes it excel in applications that require high power output.
1. **Power management**: The low on-resistance and high current carrying capacity of I403-VB make it excel in power management systems. Especially in DC-DC converters and switching power supplies, this MOSFET can effectively reduce energy loss, improve system efficiency, and ensure the stability and reliability of the power supply.
2. **Battery protection**: Due to its high current handling capability and low RDS(ON), I403-VB is very suitable for use in battery protection circuits. It can effectively control the battery charging and discharging process, prevent overcurrent and short circuit, and thus protect the safety and stability of the battery system.
3. **Motor drive**: In motor drive applications, I403-VB can provide stable and efficient switching operation. Its high current carrying capacity and low on-resistance ensure the efficient operation of the motor control system and is suitable for various motor drive circuits.
4. **Power switch**: This MOSFET is suitable for power switching applications. Due to its low RDS(ON) and high withstand voltage, it can operate stably under high load conditions, ensuring the reliability of the power switching circuit.
5. **Power Amplifier**: In the power amplifier circuit, the low on-resistance and high current handling capability of the I403-VB can reduce power loss and improve the overall efficiency of the amplifier. This makes it excel in applications that require high power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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