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I2N60-VB Product details
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1. I2N60-VB Product Introduction
I2N60-VB is a high voltage power MOSFET in TO251 package and adopts traditional planar technology. With a drain-source voltage of 650V and a drain current capability of up to 2A, this MOSFET is suitable for high voltage and low current applications. With its high threshold voltage and relatively large on-resistance, I2N60-VB performs well in situations requiring high voltage resistance and reliability. This MOSFET is commonly used in power switches, inverters and other high voltage electronic devices.
I2N60-VB is a high voltage power MOSFET in TO251 package and adopts traditional planar technology. With a drain-source voltage of 650V and a drain current capability of up to 2A, this MOSFET is suitable for high voltage and low current applications. With its high threshold voltage and relatively large on-resistance, I2N60-VB performs well in situations requiring high voltage resistance and reliability. This MOSFET is commonly used in power switches, inverters and other high voltage electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. I2N60-VB Detailed parameter description
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ@VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ@VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
Domain and module applications：
III. Application fields and module examples
1. **Power switch**: The high voltage tolerance of I2N60-VB makes it very suitable for power switch applications. Especially in high-voltage power modules, such as high-voltage DC-DC converters and AC-DC power adapters, I2N60-VB can be used as a switching element to provide reliable switching control and high-voltage isolation to ensure stable operation and safety of the power supply.
2. **Inverter**: In inverter applications, the high voltage tolerance of I2N60-VB makes it suitable for the process of converting DC to AC. Its planar technology provides good electrical performance and reliability, suitable for use in high-voltage inverter systems, and can effectively handle high-voltage switching tasks, improving the efficiency and stability of the system.
3. **High-voltage power amplifier**: In high-voltage power amplifiers, I2N60-VB can provide the necessary voltage handling capabilities and is suitable for high-voltage signal amplification applications. Despite its relatively high on-resistance, its high voltage capability and durability enable it to provide stable performance in high-voltage amplifier designs, meeting the needs of high-power amplifiers.
4. **High-voltage electronic devices**: The I2N60-VB is also suitable for other electronic devices that require high-voltage protection and control, such as high-voltage test equipment, high-voltage modules in medical equipment, and power switches in power tools. This MOSFET can provide high-voltage isolation and stable switching performance in these applications, ensuring the safety and reliability of the equipment.
Overall, the I2N60-VB is suitable for a variety of high-voltage and high-power applications with its high voltage tolerance and reliability, and can meet the needs of high-voltage switching and control.
1. **Power switch**: The high voltage tolerance of I2N60-VB makes it very suitable for power switch applications. Especially in high-voltage power modules, such as high-voltage DC-DC converters and AC-DC power adapters, I2N60-VB can be used as a switching element to provide reliable switching control and high-voltage isolation to ensure stable operation and safety of the power supply.
2. **Inverter**: In inverter applications, the high voltage tolerance of I2N60-VB makes it suitable for the process of converting DC to AC. Its planar technology provides good electrical performance and reliability, suitable for use in high-voltage inverter systems, and can effectively handle high-voltage switching tasks, improving the efficiency and stability of the system.
3. **High-voltage power amplifier**: In high-voltage power amplifiers, I2N60-VB can provide the necessary voltage handling capabilities and is suitable for high-voltage signal amplification applications. Despite its relatively high on-resistance, its high voltage capability and durability enable it to provide stable performance in high-voltage amplifier designs, meeting the needs of high-power amplifiers.
4. **High-voltage electronic devices**: The I2N60-VB is also suitable for other electronic devices that require high-voltage protection and control, such as high-voltage test equipment, high-voltage modules in medical equipment, and power switches in power tools. This MOSFET can provide high-voltage isolation and stable switching performance in these applications, ensuring the safety and reliability of the equipment.
Overall, the I2N60-VB is suitable for a variety of high-voltage and high-power applications with its high voltage tolerance and reliability, and can meet the needs of high-voltage switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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