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I2N60A-VB Product details
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Product Introduction:
I2N60A-VB is a high voltage, high withstand voltage single N-channel MOSFET in TO251 package. It has a drain-source breakdown voltage of 650V and is suitable for high voltage and medium current switching applications. The on-resistance of this MOSFET is 4300mΩ, which is suitable for scenarios requiring higher voltage tolerance. I2N60A-VB uses planar technology, which provides reliable performance and stability and is an important component in various high voltage power supplies and control systems.
I2N60A-VB is a high voltage, high withstand voltage single N-channel MOSFET in TO251 package. It has a drain-source breakdown voltage of 650V and is suitable for high voltage and medium current switching applications. The on-resistance of this MOSFET is 4300mΩ, which is suitable for scenarios requiring higher voltage tolerance. I2N60A-VB uses planar technology, which provides reliable performance and stability and is an important component in various high voltage power supplies and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Parameter description:
- **Model**: I2N60A-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar
- **Model**: I2N60A-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar
Domain and module applications：
Applications and modules:
1. **High-voltage power conversion**: The high drain-source breakdown voltage (650V) of the I2N60A-VB makes it ideal for high-voltage power converters. In AC-DC converters and high-voltage DC-DC converters, this MOSFET can withstand high voltages and provide stable switching performance, ensuring high efficiency and reliability during power conversion.
2. **Switch-mode power supply (SMPS)**: In switch-mode power supplies, the I2N60A-VB can be used as a main switch or auxiliary switch. Its high voltage tolerance and moderate current capability make it suitable for power modules with high voltage outputs. Its stable performance can improve the overall efficiency and reliability of the power supply.
3. **Motor control**: In motor drive applications, especially when high voltages need to be handled, the I2N60A-VB can be used as a switching element in the motor drive circuit. Its high voltage and current handling capabilities can effectively control the start-up and operation of the motor.
4. **Home appliances and industrial equipment**: For power management and control modules in high-voltage home appliances or industrial equipment, the I2N60A-VB provides reliable switching performance. It can be used for functions such as power protection, current limiting and voltage regulation to ensure safe and stable operation of equipment under high voltage conditions.
The high voltage tolerance, moderate current capability and stable performance of the I2N60A-VB make it excel in various high-voltage applications and is a key component in systems that require high performance and reliability.
1. **High-voltage power conversion**: The high drain-source breakdown voltage (650V) of the I2N60A-VB makes it ideal for high-voltage power converters. In AC-DC converters and high-voltage DC-DC converters, this MOSFET can withstand high voltages and provide stable switching performance, ensuring high efficiency and reliability during power conversion.
2. **Switch-mode power supply (SMPS)**: In switch-mode power supplies, the I2N60A-VB can be used as a main switch or auxiliary switch. Its high voltage tolerance and moderate current capability make it suitable for power modules with high voltage outputs. Its stable performance can improve the overall efficiency and reliability of the power supply.
3. **Motor control**: In motor drive applications, especially when high voltages need to be handled, the I2N60A-VB can be used as a switching element in the motor drive circuit. Its high voltage and current handling capabilities can effectively control the start-up and operation of the motor.
4. **Home appliances and industrial equipment**: For power management and control modules in high-voltage home appliances or industrial equipment, the I2N60A-VB provides reliable switching performance. It can be used for functions such as power protection, current limiting and voltage regulation to ensure safe and stable operation of equipment under high voltage conditions.
The high voltage tolerance, moderate current capability and stable performance of the I2N60A-VB make it excel in various high-voltage applications and is a key component in systems that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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