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I1N60L-VB Product details
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I1N60L-VB Product Introduction
The I1N60L-VB is a high voltage N-channel MOSFET in a TO251 package. Designed for high voltage applications, this MOSFET provides drain-source voltages up to 650V and gate-source voltages of ±30V. Manufactured using Plannar technology, it has high on-resistance and robust current handling capabilities, making it suitable for applications requiring high voltage tolerance and stability. The design of the I1N60L-VB enables it to have excellent performance in high voltage switching and power management, and is particularly suitable for applications requiring high voltage protection and control.
The I1N60L-VB is a high voltage N-channel MOSFET in a TO251 package. Designed for high voltage applications, this MOSFET provides drain-source voltages up to 650V and gate-source voltages of ±30V. Manufactured using Plannar technology, it has high on-resistance and robust current handling capabilities, making it suitable for applications requiring high voltage tolerance and stability. The design of the I1N60L-VB enables it to have excellent performance in high voltage switching and power management, and is particularly suitable for applications requiring high voltage protection and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
I1N60L-VB parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Typical applications**: High voltage switch, power management, high voltage protection
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Typical applications**: High voltage switch, power management, high voltage protection
Domain and module applications：
Application areas and modules of I1N60L-VB
1. **High-voltage switch**: I1N60L-VB performs well in high-voltage switching applications and can withstand drain-source voltages up to 650V, suitable for switching control of high-voltage power supplies. Its high on-resistance enables it to provide reliable performance in switching applications that require high voltage tolerance.
2. **Power management**: In power management systems, I1N60L-VB can be used for the management and protection of high-voltage power supplies. Its high voltage tolerance makes it suitable for high-voltage switching and control functions in power systems to ensure stable operation and safety of the system.
3. **High-voltage protection**: Due to its high drain-source voltage capability, I1N60L-VB can be used in high-voltage protection applications. For example, in a power circuit, this MOSFET can be used as a protection switch to prevent overvoltage from damaging circuit components.
4. **Power converter**: The I1N60L-VB is suitable for use in high-voltage power converters, providing high voltage tolerance and stable switching performance. Its design enables it to effectively control and convert current under high voltage conditions, improving the reliability and efficiency of the converter.
5. **High-voltage motor drive**: In high-voltage motor drive applications, the I1N60L-VB can be used to control the start and stop of high-voltage motors. Its high voltage and current handling capabilities enable it to stably control motor operation and is suitable for high-voltage motor drive systems.
1. **High-voltage switch**: I1N60L-VB performs well in high-voltage switching applications and can withstand drain-source voltages up to 650V, suitable for switching control of high-voltage power supplies. Its high on-resistance enables it to provide reliable performance in switching applications that require high voltage tolerance.
2. **Power management**: In power management systems, I1N60L-VB can be used for the management and protection of high-voltage power supplies. Its high voltage tolerance makes it suitable for high-voltage switching and control functions in power systems to ensure stable operation and safety of the system.
3. **High-voltage protection**: Due to its high drain-source voltage capability, I1N60L-VB can be used in high-voltage protection applications. For example, in a power circuit, this MOSFET can be used as a protection switch to prevent overvoltage from damaging circuit components.
4. **Power converter**: The I1N60L-VB is suitable for use in high-voltage power converters, providing high voltage tolerance and stable switching performance. Its design enables it to effectively control and convert current under high voltage conditions, improving the reliability and efficiency of the converter.
5. **High-voltage motor drive**: In high-voltage motor drive applications, the I1N60L-VB can be used to control the start and stop of high-voltage motors. Its high voltage and current handling capabilities enable it to stably control motor operation and is suitable for high-voltage motor drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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