HYQ12P10D-VB Product details
Product introduction:
HYQ12P10D-VB is a high-performance single P-channel MOSFET packaged in TO252 and using advanced Trench technology. The MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -2V, and its on-resistance (RDS(ON)) is 120mΩ at a gate voltage of 4.5V and 100mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of -16A. With its low on-resistance and high switching efficiency, HYQ12P10D-VB is widely used in power management, electric vehicles, load switches and other fields, providing efficient and reliable switching solutions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -16A
- **Technology type**: Trench
- **Typical operating temperature range**: -55°C to 150°C
Domain and module applications:
1. **Power management system**
HYQ12P10D-VB is used for efficient power switching and regulation in power management systems. Its low on-resistance and high switching efficiency enable it to effectively control the flow of current and improve the overall performance of the power module, especially in power control applications that require high stability and reliability.
2. **Electric vehicle control system**
In electric vehicle control systems, this MOSFET is used to drive and control motors and other high-current loads. Due to its high withstand voltage and low on-resistance, HYQ12P10D-VB is able to provide stable switching performance under high current and high load conditions, improving the efficiency and reliability of electric vehicles.
3. **DC-DC converter**
HYQ12P10D-VB is suitable for DC-DC converters, especially those applications that require high withstand voltage and low on-resistance. It can effectively manage power conversion, reduce power loss, and improve the overall efficiency of the system.
4. **Load switch application**
In the load switch module, the single P-channel configuration of HYQ12P10D-VB provides reliable switch control. It can efficiently switch current in various load switch applications, ensure the stability and performance of the system, and is suitable for load control systems such as home appliances and industrial equipment.
With its high withstand voltage, low on-resistance and excellent switching performance, HYQ12P10D-VB provides efficient and reliable solutions in power management systems, electric vehicle control systems, DC-DC converters and load switch applications.
Technical support:
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