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HYG800P10LR1D-VB Product details
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1. HYG800P10LR1D-VB Product Introduction
HYG800P10LR1D-VB is a high-performance P-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, and it can handle a drain current of up to -16A. Its gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is -2V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 120mΩ, and it is further reduced to 100mΩ at a gate-source voltage of 10V. HYG800P10LR1D-VB uses advanced Trench technology to provide low conduction loss and high-efficiency power management performance, suitable for a variety of high-voltage switching and power applications.
HYG800P10LR1D-VB is a high-performance P-channel MOSFET in TO252 package, designed for high voltage and medium current applications. The maximum drain-source voltage (VDS) of this MOSFET is -100V, and it can handle a drain current of up to -16A. Its gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is -2V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 120mΩ, and it is further reduced to 100mΩ at a gate-source voltage of 10V. HYG800P10LR1D-VB uses advanced Trench technology to provide low conduction loss and high-efficiency power management performance, suitable for a variety of high-voltage switching and power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. HYG800P10LR1D-VB Detailed parameter description
1. **Package type**: TO252
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 120mΩ@VGS=4.5V
- 100mΩ@VGS=10V
7. **Drain current (ID)**: -16A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: -25A (10us)
1. **Package type**: TO252
2. **Configuration**: Single P-channel
3. **Drain-source voltage (VDS)**: -100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 120mΩ@VGS=4.5V
- 100mΩ@VGS=10V
7. **Drain current (ID)**: -16A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: -25A (10us)
Domain and module applications：
3. Application fields and module examples
1. **Power management system**: The high voltage carrying capacity and low on-resistance of HYG800P10LR1D-VB make it very suitable for power management systems. In these systems, it can effectively control high voltage loads and reduce power losses. It is suitable for computer power modules, battery management systems, and industrial power equipment.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can effectively handle high voltage loads as a switching element and improve conversion efficiency. It is suitable for DC-DC converters with high voltage input or output to ensure stable power conversion performance.
3. **Automotive electronic system**: HYG800P10LR1D-VB is also used in automotive electronic systems. Its high voltage handling capability and stable switching performance make it suitable for automotive battery management systems, electric vehicle drive circuits, and automotive power switches.
4. **Power switching application**: The high voltage withstand and medium current handling capabilities of this MOSFET make it suitable for various power switching applications. For example, in inverters and high-power load switches, it can provide stable switching performance and improve the overall efficiency and reliability of the system.
The high voltage carrying capability and low on-resistance of the HYG800P10LR1D-VB make it an excellent performer in high voltage and medium current applications, and is an important component in power electronic systems.
1. **Power management system**: The high voltage carrying capacity and low on-resistance of HYG800P10LR1D-VB make it very suitable for power management systems. In these systems, it can effectively control high voltage loads and reduce power losses. It is suitable for computer power modules, battery management systems, and industrial power equipment.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can effectively handle high voltage loads as a switching element and improve conversion efficiency. It is suitable for DC-DC converters with high voltage input or output to ensure stable power conversion performance.
3. **Automotive electronic system**: HYG800P10LR1D-VB is also used in automotive electronic systems. Its high voltage handling capability and stable switching performance make it suitable for automotive battery management systems, electric vehicle drive circuits, and automotive power switches.
4. **Power switching application**: The high voltage withstand and medium current handling capabilities of this MOSFET make it suitable for various power switching applications. For example, in inverters and high-power load switches, it can provide stable switching performance and improve the overall efficiency and reliability of the system.
The high voltage carrying capability and low on-resistance of the HYG800P10LR1D-VB make it an excellent performer in high voltage and medium current applications, and is an important component in power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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