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HYG420N06LR1D-VB Product details
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Product Introduction: HYG420N06LR1D-VB
HYG420N06LR1D-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed for high-efficiency switching applications and can handle drain-source voltage (VDS) up to 60V and gate drive voltage (VGS) of ±20V. This MOSFET uses advanced trench technology, with an on-resistance as low as 25mΩ at VGS=10V and can withstand drain currents up to 45A. HYG420N06LR1D-VB provides excellent switching performance and high efficiency, and is suitable for a variety of high-power power supplies and switching modules.
HYG420N06LR1D-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed for high-efficiency switching applications and can handle drain-source voltage (VDS) up to 60V and gate drive voltage (VGS) of ±20V. This MOSFET uses advanced trench technology, with an on-resistance as low as 25mΩ at VGS=10V and can withstand drain currents up to 45A. HYG420N06LR1D-VB provides excellent switching performance and high efficiency, and is suitable for a variety of high-power power supplies and switching modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 45A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 2.5W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 55nC
12. **Reverse recovery time (trr)**: 50ns
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 45A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 2.5W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 55nC
12. **Reverse recovery time (trr)**: 50ns
Domain and module applications：
Applications and module examples:
1. **Switching Power Supply (SMPS)**: HYG420N06LR1D-VB is ideal for high-efficiency switching power supply applications such as DC-DC converters and adapters. Its low on-resistance and high current handling capability ensure high efficiency and stability of the power supply.
2. **Motor Drive System**: In motor control and drive applications, this MOSFET can be used as a high-current switch for electric vehicles, industrial motor drive systems, etc. Its high current carrying capacity and low on-resistance provide good motor control performance and high efficiency.
3. **Battery Management System (BMS)**: HYG420N06LR1D-VB is suitable for switching applications in battery management systems, such as electric vehicle battery packs and energy storage systems. Its high conductivity and low power consumption optimize the battery charging and discharging process, improving the reliability and efficiency of the system.
4. **LED Driver**: In LED lighting systems, HYG420N06LR1D-VB can be used for efficient current switching and control, supporting high-brightness and high-power LED lighting solutions. Its low on-resistance helps reduce energy loss and improve system efficiency.
5. **Automotive Electronics**: HYG420N06LR1D-VB can be used in automotive electronic devices such as power seats, power windows, and power management systems. Its compact package and high efficiency ensure stable operation and long life of automotive systems.
HYG420N06LR1D-VB provides excellent switching performance and high current carrying capacity, providing a reliable and efficient solution for a variety of high-power applications.
1. **Switching Power Supply (SMPS)**: HYG420N06LR1D-VB is ideal for high-efficiency switching power supply applications such as DC-DC converters and adapters. Its low on-resistance and high current handling capability ensure high efficiency and stability of the power supply.
2. **Motor Drive System**: In motor control and drive applications, this MOSFET can be used as a high-current switch for electric vehicles, industrial motor drive systems, etc. Its high current carrying capacity and low on-resistance provide good motor control performance and high efficiency.
3. **Battery Management System (BMS)**: HYG420N06LR1D-VB is suitable for switching applications in battery management systems, such as electric vehicle battery packs and energy storage systems. Its high conductivity and low power consumption optimize the battery charging and discharging process, improving the reliability and efficiency of the system.
4. **LED Driver**: In LED lighting systems, HYG420N06LR1D-VB can be used for efficient current switching and control, supporting high-brightness and high-power LED lighting solutions. Its low on-resistance helps reduce energy loss and improve system efficiency.
5. **Automotive Electronics**: HYG420N06LR1D-VB can be used in automotive electronic devices such as power seats, power windows, and power management systems. Its compact package and high efficiency ensure stable operation and long life of automotive systems.
HYG420N06LR1D-VB provides excellent switching performance and high current carrying capacity, providing a reliable and efficient solution for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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