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HYG400P10LQ1D-VB Product details
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Product Introduction:
HYG400P10LQ1D-VB is a high-performance single P-channel MOSFET packaged in TO252. This MOSFET is suitable for high voltage and high current applications. Its drain-source breakdown voltage is -100V, which is particularly suitable for switching and control in negative voltage environments. It has good on-resistance performance, which is 37mΩ at VGS=4.5V and 33mΩ at VGS=10V. HYG400P10LQ1D-VB uses advanced trench technology, providing excellent switching performance and thermal stability, making it an ideal choice for various power management and negative voltage switching applications.
HYG400P10LQ1D-VB is a high-performance single P-channel MOSFET packaged in TO252. This MOSFET is suitable for high voltage and high current applications. Its drain-source breakdown voltage is -100V, which is particularly suitable for switching and control in negative voltage environments. It has good on-resistance performance, which is 37mΩ at VGS=4.5V and 33mΩ at VGS=10V. HYG400P10LQ1D-VB uses advanced trench technology, providing excellent switching performance and thermal stability, making it an ideal choice for various power management and negative voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter description:
- **Model**: HYG400P10LQ1D-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ@VGS=4.5V
- 33mΩ@VGS=10V
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
- **Model**: HYG400P10LQ1D-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ@VGS=4.5V
- 33mΩ@VGS=10V
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
Domain and module applications：
Applications and modules:
1. **Negative power switch**: The high drain-source breakdown voltage (-100V) and moderate on-resistance of HYG400P10LQ1D-VB make it very suitable for negative power switch. It can effectively handle high current in negative voltage environment and is widely used in switch control of negative voltage power supply to ensure the stability and reliability of the system.
2. **Power management module**: In various power management modules, HYG400P10LQ1D-VB can be used as an efficient power switch. Its low on-resistance (33mΩ@VGS=10V) provides lower power loss in high current applications and is suitable for high-efficiency power conversion and control modules such as DC-DC converters and power adapters.
3. **Battery protection circuit**: In the battery protection circuit, the high voltage capability and low on-resistance of HYG400P10LQ1D-VB make it suitable for overvoltage and overcurrent protection of the battery. It can effectively control the battery's charge and discharge process, ensuring the safety and long life of the battery at work.
4. **High-power electronic devices**: For high-power electronic devices that require high current and high voltage protection, HYG400P10LQ1D-VB provides an ideal solution. Its excellent switching performance and low power loss make it a key component in various high-power power supplies and control modules.
The high drain-source breakdown voltage, low on-resistance and strong current handling capability of HYG400P10LQ1D-VB make it perform well in various negative voltage and high current applications, and it is a key component to achieve high efficiency and reliability.
1. **Negative power switch**: The high drain-source breakdown voltage (-100V) and moderate on-resistance of HYG400P10LQ1D-VB make it very suitable for negative power switch. It can effectively handle high current in negative voltage environment and is widely used in switch control of negative voltage power supply to ensure the stability and reliability of the system.
2. **Power management module**: In various power management modules, HYG400P10LQ1D-VB can be used as an efficient power switch. Its low on-resistance (33mΩ@VGS=10V) provides lower power loss in high current applications and is suitable for high-efficiency power conversion and control modules such as DC-DC converters and power adapters.
3. **Battery protection circuit**: In the battery protection circuit, the high voltage capability and low on-resistance of HYG400P10LQ1D-VB make it suitable for overvoltage and overcurrent protection of the battery. It can effectively control the battery's charge and discharge process, ensuring the safety and long life of the battery at work.
4. **High-power electronic devices**: For high-power electronic devices that require high current and high voltage protection, HYG400P10LQ1D-VB provides an ideal solution. Its excellent switching performance and low power loss make it a key component in various high-power power supplies and control modules.
The high drain-source breakdown voltage, low on-resistance and strong current handling capability of HYG400P10LQ1D-VB make it perform well in various negative voltage and high current applications, and it is a key component to achieve high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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