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HYG210P06LQ1D-VB Product details
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HYG210P06LQ1D-VB Product Introduction
HYG210P06LQ1D-VB is a high-performance single P-channel MOSFET in TO252 package, designed for negative voltage applications. Using advanced Trench technology, this MOSFET provides low on-resistance and high current handling capability, suitable for a variety of high-efficiency power switching and load control applications. Its design not only ensures high reliability and stability, but also effectively reduces power loss, making it a key component in power management systems.
HYG210P06LQ1D-VB is a high-performance single P-channel MOSFET in TO252 package, designed for negative voltage applications. Using advanced Trench technology, this MOSFET provides low on-resistance and high current handling capability, suitable for a variety of high-efficiency power switching and load control applications. Its design not only ensures high reliability and stability, but also effectively reduces power loss, making it a key component in power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
HYG210P06LQ1D-VB Parameters
- **Package type**: TO252
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 20mΩ @ VGS=10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench technology
- **Typical applications**: Power switch, load switch, DC-DC converter, power management
- **Package type**: TO252
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 20mΩ @ VGS=10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench technology
- **Typical applications**: Power switch, load switch, DC-DC converter, power management
Domain and module applications：
Application fields and modules of HYG210P06LQ1D-VB
1. **Power switch**: HYG210P06LQ1D-VB can provide efficient switch control in power switch applications. Its low on-resistance and high current handling capability make it suitable for switching high-power loads, which can effectively reduce switching losses and improve system efficiency.
2. **Load switch**: In load switch applications, HYG210P06LQ1D-VB can be used for switching and controlling loads, especially when the load current is large. Its high current carrying capacity and low on-resistance characteristics enable it to operate stably in load switches, improving system reliability and efficiency.
3. **DC-DC converter**: In DC-DC converter applications, HYG210P06LQ1D-VB can achieve efficient voltage conversion. Its low on-resistance and high current capability enable it to effectively reduce energy loss during power conversion and improve the overall efficiency of the converter.
4. **Power Management**: In power management systems, HYG210P06LQ1D-VB can be used for power distribution and management. Its high current handling capability enables it to handle larger current loads while reducing power consumption and improving system stability.
5. **Negative Voltage Switching Application**: HYG210P06LQ1D-VB is very suitable for negative voltage switching applications due to its P-channel configuration and negative voltage tolerance. For example, in some circuits that require negative voltage control, this MOSFET can provide stable and reliable switching performance to ensure the normal operation of the circuit.
1. **Power switch**: HYG210P06LQ1D-VB can provide efficient switch control in power switch applications. Its low on-resistance and high current handling capability make it suitable for switching high-power loads, which can effectively reduce switching losses and improve system efficiency.
2. **Load switch**: In load switch applications, HYG210P06LQ1D-VB can be used for switching and controlling loads, especially when the load current is large. Its high current carrying capacity and low on-resistance characteristics enable it to operate stably in load switches, improving system reliability and efficiency.
3. **DC-DC converter**: In DC-DC converter applications, HYG210P06LQ1D-VB can achieve efficient voltage conversion. Its low on-resistance and high current capability enable it to effectively reduce energy loss during power conversion and improve the overall efficiency of the converter.
4. **Power Management**: In power management systems, HYG210P06LQ1D-VB can be used for power distribution and management. Its high current handling capability enables it to handle larger current loads while reducing power consumption and improving system stability.
5. **Negative Voltage Switching Application**: HYG210P06LQ1D-VB is very suitable for negative voltage switching applications due to its P-channel configuration and negative voltage tolerance. For example, in some circuits that require negative voltage control, this MOSFET can provide stable and reliable switching performance to ensure the normal operation of the circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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