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HYG110P04LQ1D-VB Product details
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Product Introduction
**HYG110P04LQ1D-VB** is a high-performance P-type MOSFET in TO252 package. With high current carrying capacity and low on-resistance, the device is very suitable for power management and switching applications that require high efficiency. Its design is based on Trench technology, providing excellent switching characteristics and high voltage resistance.
**HYG110P04LQ1D-VB** is a high-performance P-type MOSFET in TO252 package. With high current carrying capacity and low on-resistance, the device is very suitable for power management and switching applications that require high efficiency. Its design is based on Trench technology, providing excellent switching characteristics and high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Unipolar P-type MOSFET
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
1. **Power management**: HYG110P04LQ1D-VB is particularly suitable for switching and regulating circuits in power management modules due to its low RDS(ON) and high current handling capability. In DC-DC converters and power supplies, it can effectively reduce energy loss and improve overall efficiency.
2. **Battery protection**: The high withstand voltage and low on-resistance of this MOSFET make it an ideal choice for battery protection circuits. It can effectively control the battery's charge and discharge process and prevent overcurrent and short circuit, thereby protecting the battery from damage.
3. **Motor drive**: In motor drive applications, HYG110P04LQ1D-VB is able to provide stable switching performance and is suitable for various motor control circuits. Its high current handling capability ensures high efficiency and reliability of motor drive.
4. **Power amplifier**: In power amplifier modules, low on-resistance can effectively reduce power loss and improve the overall efficiency of the amplifier. This makes the HYG110P04LQ1D-VB a key component in high power amplifier circuits.
5. **Power Switch**: Due to its low RDS(ON) characteristics and high withstand voltage, the HYG110P04LQ1D-VB can be used in a variety of power switch applications. It is able to provide stable switching operation, ensuring that the circuit can still work normally under high load conditions.
1. **Power management**: HYG110P04LQ1D-VB is particularly suitable for switching and regulating circuits in power management modules due to its low RDS(ON) and high current handling capability. In DC-DC converters and power supplies, it can effectively reduce energy loss and improve overall efficiency.
2. **Battery protection**: The high withstand voltage and low on-resistance of this MOSFET make it an ideal choice for battery protection circuits. It can effectively control the battery's charge and discharge process and prevent overcurrent and short circuit, thereby protecting the battery from damage.
3. **Motor drive**: In motor drive applications, HYG110P04LQ1D-VB is able to provide stable switching performance and is suitable for various motor control circuits. Its high current handling capability ensures high efficiency and reliability of motor drive.
4. **Power amplifier**: In power amplifier modules, low on-resistance can effectively reduce power loss and improve the overall efficiency of the amplifier. This makes the HYG110P04LQ1D-VB a key component in high power amplifier circuits.
5. **Power Switch**: Due to its low RDS(ON) characteristics and high withstand voltage, the HYG110P04LQ1D-VB can be used in a variety of power switch applications. It is able to provide stable switching operation, ensuring that the circuit can still work normally under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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