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HYG065P03LQ1D-VB Product details
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Product Introduction:
HYG065P03LQ1D-VB is a high-performance single P-channel MOSFET in TO252 package. This MOSFET is designed for medium negative voltage and high current applications and is suitable for various power management and control systems. Its drain-source breakdown voltage is -30V, which is suitable for operation in negative voltage environments. The on-resistance of HYG065P03LQ1D-VB is 7mΩ at VGS=4.5V and 5mΩ at VGS=10V, indicating that it has excellent low power loss performance under negative current conditions. Using advanced trench technology, this MOSFET provides excellent switching performance and thermal stability.
HYG065P03LQ1D-VB is a high-performance single P-channel MOSFET in TO252 package. This MOSFET is designed for medium negative voltage and high current applications and is suitable for various power management and control systems. Its drain-source breakdown voltage is -30V, which is suitable for operation in negative voltage environments. The on-resistance of HYG065P03LQ1D-VB is 7mΩ at VGS=4.5V and 5mΩ at VGS=10V, indicating that it has excellent low power loss performance under negative current conditions. Using advanced trench technology, this MOSFET provides excellent switching performance and thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Parameter description:
- **Model**: HYG065P03LQ1D-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Maximum drain current (ID)**: -100A
- **Technology**: Trench
- **Model**: HYG065P03LQ1D-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Drain-source breakdown voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Maximum drain current (ID)**: -100A
- **Technology**: Trench
Domain and module applications：
Applications and modules:
1. **Negative power switch**: The low on-resistance (5mΩ@VGS=10V) and high current capability (-100A) of HYG065P03LQ1D-VB make it very suitable for negative power switch. It can efficiently switch large currents in negative voltage environments and is widely used in the switching control of negative voltage power supplies to ensure high efficiency and reliability of the system.
2. **Electric vehicles (EV) and energy storage systems**: In electric vehicles and energy storage systems, HYG065P03LQ1D-VB, as a P-channel MOSFET, can be used for negative voltage control in battery management systems. Its high current handling capability and low on-resistance enable it to efficiently manage the battery charging and discharging process, and be used in battery protection circuits to improve the stability and reliability of the system.
3. **Power management module**: Among various power management modules, the excellent performance of HYG065P03LQ1D-VB makes it an ideal choice. It can be used for efficient power conversion and control, and is suitable for use in DC-DC converters and high-efficiency power modules to improve the overall energy efficiency of the system.
4. **High-power power supply and power protection**: HYG065P03LQ1D-VB is suitable for switching and protection circuits of high-power power supplies. Its high current capability and low on-resistance ensure high efficiency and low power consumption in high-power applications, and is suitable for protection circuits and power switch modules of high-power electronic devices.
The low on-resistance, excellent switching performance and high current handling capability of HYG065P03LQ1D-VB enable it to perform well in various negative voltage and high current applications, and is a key component in high-efficiency power management and power control systems.
1. **Negative power switch**: The low on-resistance (5mΩ@VGS=10V) and high current capability (-100A) of HYG065P03LQ1D-VB make it very suitable for negative power switch. It can efficiently switch large currents in negative voltage environments and is widely used in the switching control of negative voltage power supplies to ensure high efficiency and reliability of the system.
2. **Electric vehicles (EV) and energy storage systems**: In electric vehicles and energy storage systems, HYG065P03LQ1D-VB, as a P-channel MOSFET, can be used for negative voltage control in battery management systems. Its high current handling capability and low on-resistance enable it to efficiently manage the battery charging and discharging process, and be used in battery protection circuits to improve the stability and reliability of the system.
3. **Power management module**: Among various power management modules, the excellent performance of HYG065P03LQ1D-VB makes it an ideal choice. It can be used for efficient power conversion and control, and is suitable for use in DC-DC converters and high-efficiency power modules to improve the overall energy efficiency of the system.
4. **High-power power supply and power protection**: HYG065P03LQ1D-VB is suitable for switching and protection circuits of high-power power supplies. Its high current capability and low on-resistance ensure high efficiency and low power consumption in high-power applications, and is suitable for protection circuits and power switch modules of high-power electronic devices.
The low on-resistance, excellent switching performance and high current handling capability of HYG065P03LQ1D-VB enable it to perform well in various negative voltage and high current applications, and is a key component in high-efficiency power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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