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HYG046N04LQ1D-VB Product details

Product introduction:

HYG046N04LQ1D-VB Product Introduction
HYG046N04LQ1D-VB is a high-performance single N-channel MOSFET with TO252 package type, designed for low voltage and high current applications. It uses advanced Trench technology to provide extremely low on-resistance and strong current handling capabilities. This makes HYG046N04LQ1D-VB excellent in power management and switching applications that require high efficiency and high reliability. Its high current capability and low on-resistance characteristics make it an indispensable component in high-performance electrical systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 85A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
HYG046N04LQ1D-VB Parameters: - **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, DC-DC converters, motor control, high-power switches

Domain and module applications:

Application areas and modules of HYG046N04LQ1D-VB
1. **High-efficiency power management**: Due to its extremely low on-resistance and high current handling capability, the HYG046N04LQ1D-VB is suitable for use in high-efficiency power management systems. In power modules and high-power power systems, this MOSFET can significantly reduce power consumption, improve system efficiency, and optimize the power conversion process.

2. **DC-DC converter**: The HYG046N04LQ1D-VB performs well in DC-DC converter applications, effectively converting voltages and providing stable power output. Its low on-resistance and high current capability make it suitable for high-current and high-power density converter designs, helping to improve the overall performance and efficiency of the system.

3. **Motor control system**: In motor control systems, such as industrial motor drives and power tools, the HYG046N04LQ1D-VB is able to handle high current loads and improve the stability and efficiency of the control system. Its high current carrying capacity and low on-resistance make it an ideal choice for motor control applications.

4. **High Power Switch**: HYG046N04LQ1D-VB is suitable for high power switching applications such as power conversion and load switching. In systems that need to handle high currents, this MOSFET can ensure reliable power switching and improve system stability and performance.

5. **Automotive Electronics**: In automotive electronics applications, HYG046N04LQ1D-VB is suitable for electric vehicle powertrains and on-board power management modules. Its high current capability and low on-resistance characteristics enable it to meet the high efficiency and reliability requirements in automotive electrical systems, providing stable power management and switching control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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