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HYG045P03LQ1D-VB Product details
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1. HYG045P03LQ1D-VB Product Introduction
HYG045P03LQ1D-VB is a high-performance single P-channel MOSFET packaged in TO252 and using advanced Trench technology. This MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -3V, and its on-resistance (RDS(ON)) is 7mΩ at a gate voltage of 4.5V and 5mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to -100A. The low on-resistance and high current capability of the HYG045P03LQ1D-VB make it ideal for high-efficiency switching applications, especially in environments that require high current and low power consumption.
HYG045P03LQ1D-VB is a high-performance single P-channel MOSFET packaged in TO252 and using advanced Trench technology. This MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -3V, and its on-resistance (RDS(ON)) is 7mΩ at a gate voltage of 4.5V and 5mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to -100A. The low on-resistance and high current capability of the HYG045P03LQ1D-VB make it ideal for high-efficiency switching applications, especially in environments that require high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. HYG045P03LQ1D-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -100A
- **Technology type**: Trench
- **Typical operating temperature range**: -55°C to 150°C
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -100A
- **Technology type**: Trench
- **Typical operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power management system**
The low on-resistance and high current capability of HYG045P03LQ1D-VB make it excellent in high-efficiency power management systems. Especially in applications that require high current switching, such as power converters and DC-DC converters, this MOSFET can effectively reduce power loss and improve system efficiency.
2. **Electric vehicle power control**
In the power control module of electric vehicles, the high current capability and low on-resistance of HYG045P03LQ1D-VB are very suitable for power switching and motor drive. Its superior switching performance and high withstand voltage characteristics help improve the overall performance and battery efficiency of electric vehicles.
3. **Power switch and load switch**
For applications that require high current load switching, HYG045P03LQ1D-VB provides a reliable solution. In power switch and load switch modules, it can quickly and effectively control the flow of current to ensure stable system operation.
4. **Power protection and overcurrent protection circuits**
Due to its excellent switching performance and low on-resistance, HYG045P03LQ1D-VB is also very suitable for use in power protection circuits and overcurrent protection circuits. It can respond quickly and protect the circuit from overcurrent damage, improving the safety and reliability of the system.
With its high current capability, low on-resistance and high efficiency, HYG045P03LQ1D-VB provides strong performance support in the fields of high-efficiency power management, electric vehicle power control, power switches and load switches.
1. **High-efficiency power management system**
The low on-resistance and high current capability of HYG045P03LQ1D-VB make it excellent in high-efficiency power management systems. Especially in applications that require high current switching, such as power converters and DC-DC converters, this MOSFET can effectively reduce power loss and improve system efficiency.
2. **Electric vehicle power control**
In the power control module of electric vehicles, the high current capability and low on-resistance of HYG045P03LQ1D-VB are very suitable for power switching and motor drive. Its superior switching performance and high withstand voltage characteristics help improve the overall performance and battery efficiency of electric vehicles.
3. **Power switch and load switch**
For applications that require high current load switching, HYG045P03LQ1D-VB provides a reliable solution. In power switch and load switch modules, it can quickly and effectively control the flow of current to ensure stable system operation.
4. **Power protection and overcurrent protection circuits**
Due to its excellent switching performance and low on-resistance, HYG045P03LQ1D-VB is also very suitable for use in power protection circuits and overcurrent protection circuits. It can respond quickly and protect the circuit from overcurrent damage, improving the safety and reliability of the system.
With its high current capability, low on-resistance and high efficiency, HYG045P03LQ1D-VB provides strong performance support in the fields of high-efficiency power management, electric vehicle power control, power switches and load switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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