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HYG025N04LQ1D-VB Product details
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Product Introduction:
HYG025N04LQ1D-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low on-resistance. The MOSFET has a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. Manufactured using advanced trench technology, the HYG025N04LQ1D-VB has an extremely low on-resistance of 3mΩ at a VGS of 4.5V and 1.6mΩ at a VGS of 10V, and is capable of handling drain currents (ID) of up to 120A. These features make the HYG025N04LQ1D-VB ideal for high-efficiency power management and high-power applications.
HYG025N04LQ1D-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low on-resistance. The MOSFET has a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. Manufactured using advanced trench technology, the HYG025N04LQ1D-VB has an extremely low on-resistance of 3mΩ at a VGS of 4.5V and 1.6mΩ at a VGS of 10V, and is capable of handling drain currents (ID) of up to 120A. These features make the HYG025N04LQ1D-VB ideal for high-efficiency power management and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application areas and modules:
1. **High-efficiency power management**: HYG025N04LQ1D-VB is suitable for high-efficiency power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Due to its low on-resistance and high current handling capability, this MOSFET can significantly improve the conversion efficiency of the power supply, reduce power consumption and heat generation, and thus improve the overall performance of the power management system.
2. **Motor drive**: In motor drive applications, such as electric power steering systems (EPS) and high-power servo motors, the high current carrying capacity and low on-resistance of HYG025N04LQ1D-VB enable it to stably drive the motor, providing excellent control efficiency and performance.
3. **Power protection and control**: HYG025N04LQ1D-VB is suitable for power protection and control circuits, such as overcurrent protection and short-circuit protection systems. Its high current handling capability and low on-resistance can effectively protect the circuit under high power conditions and improve the safety and reliability of the system.
4. **Automotive Electronic Systems**: In automotive electronic applications, such as battery management systems (BMS) and high-power on-board electronic devices, the HYG025N04LQ1D-VB can handle high current loads, ensure system stability and long-term reliability, and meet the needs of automotive electronics for high power and high efficiency.
With its high current handling capability and low on-resistance, the HYG025N04LQ1D-VB is suitable for high-efficiency power management, motor drive, power protection, and automotive electronics, and can provide excellent performance for a variety of high-power applications.
1. **High-efficiency power management**: HYG025N04LQ1D-VB is suitable for high-efficiency power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Due to its low on-resistance and high current handling capability, this MOSFET can significantly improve the conversion efficiency of the power supply, reduce power consumption and heat generation, and thus improve the overall performance of the power management system.
2. **Motor drive**: In motor drive applications, such as electric power steering systems (EPS) and high-power servo motors, the high current carrying capacity and low on-resistance of HYG025N04LQ1D-VB enable it to stably drive the motor, providing excellent control efficiency and performance.
3. **Power protection and control**: HYG025N04LQ1D-VB is suitable for power protection and control circuits, such as overcurrent protection and short-circuit protection systems. Its high current handling capability and low on-resistance can effectively protect the circuit under high power conditions and improve the safety and reliability of the system.
4. **Automotive Electronic Systems**: In automotive electronic applications, such as battery management systems (BMS) and high-power on-board electronic devices, the HYG025N04LQ1D-VB can handle high current loads, ensure system stability and long-term reliability, and meet the needs of automotive electronics for high power and high efficiency.
With its high current handling capability and low on-resistance, the HYG025N04LQ1D-VB is suitable for high-efficiency power management, motor drive, power protection, and automotive electronics, and can provide excellent performance for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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