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HYG023N03LR1D-VB Product details
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Product Introduction: HYG023N03LR1D-VB
HYG023N03LR1D-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed for applications requiring high current and high switching efficiency, with a drain-source voltage (VDS) of 30V and a gate drive voltage (VGS) of ±20V. This MOSFET uses advanced trench technology, with an on-resistance as low as 2mΩ (at VGS=10V) and can handle drain currents up to 120A. HYG023N03LR1D-VB is suitable for a variety of high-efficiency power management and switching applications, providing excellent performance and reliability.
HYG023N03LR1D-VB is a high-performance single N-channel MOSFET in TO252 package. It is designed for applications requiring high current and high switching efficiency, with a drain-source voltage (VDS) of 30V and a gate drive voltage (VGS) of ±20V. This MOSFET uses advanced trench technology, with an on-resistance as low as 2mΩ (at VGS=10V) and can handle drain currents up to 120A. HYG023N03LR1D-VB is suitable for a variety of high-efficiency power management and switching applications, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 120A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 150W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 200nC
12. **Reverse recovery time (trr)**: 30ns
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 120A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 150W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 200nC
12. **Reverse recovery time (trr)**: 30ns
Domain and module applications：
Application areas and module examples:
1. **Power management system**: HYG023N03LR1D-VB is suitable for high-efficiency power management modules, such as high-power DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current handling capability enable it to provide excellent performance and efficiency in power management, reduce energy loss, and improve the overall efficiency of the system.
2. **Motor drive control**: In motor control systems, this MOSFET is capable of handling large current loads and is very suitable for electric vehicle drive systems, power tools, and industrial motor control. Its high current carrying capacity and low on-resistance ensure efficient operation and stable control of the motor.
3. **Battery management system (BMS)**: HYG023N03LR1D-VB can be used in battery management systems, especially in electric vehicles and energy storage systems. Its high current handling capability and low on-resistance optimize the battery charging and discharging process, improving the efficiency and reliability of the system.
4. **Automotive Electronic Applications**: This MOSFET is suitable for high-power switching applications in automotive electronic devices, such as power windows, power seats, and on-board power management systems. Its high efficiency and reliability ensure the stability and performance of automotive electronic systems.
5. **Power Inverter**: In photovoltaic systems and uninterruptible power supplies (UPS), HYG023N03LR1D-VB can be used as a key component of the power inverter. It can handle high current and high power, ensuring high efficiency and stability of the system, and supporting reliable power conversion and distribution.
The high current handling capability and low on-resistance of HYG023N03LR1D-VB make it excel in a variety of high-power applications, providing an efficient and reliable solution for power management and switching applications.
1. **Power management system**: HYG023N03LR1D-VB is suitable for high-efficiency power management modules, such as high-power DC-DC converters and switching power supplies (SMPS). Its low on-resistance and high current handling capability enable it to provide excellent performance and efficiency in power management, reduce energy loss, and improve the overall efficiency of the system.
2. **Motor drive control**: In motor control systems, this MOSFET is capable of handling large current loads and is very suitable for electric vehicle drive systems, power tools, and industrial motor control. Its high current carrying capacity and low on-resistance ensure efficient operation and stable control of the motor.
3. **Battery management system (BMS)**: HYG023N03LR1D-VB can be used in battery management systems, especially in electric vehicles and energy storage systems. Its high current handling capability and low on-resistance optimize the battery charging and discharging process, improving the efficiency and reliability of the system.
4. **Automotive Electronic Applications**: This MOSFET is suitable for high-power switching applications in automotive electronic devices, such as power windows, power seats, and on-board power management systems. Its high efficiency and reliability ensure the stability and performance of automotive electronic systems.
5. **Power Inverter**: In photovoltaic systems and uninterruptible power supplies (UPS), HYG023N03LR1D-VB can be used as a key component of the power inverter. It can handle high current and high power, ensuring high efficiency and stability of the system, and supporting reliable power conversion and distribution.
The high current handling capability and low on-resistance of HYG023N03LR1D-VB make it excel in a variety of high-power applications, providing an efficient and reliable solution for power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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