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HY5110W-VB Product details
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Product Introduction:
HY5110W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for applications requiring high current and high voltage. This MOSFET has a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Manufactured using advanced trench technology, the HY5110W-VB has an extremely low on-resistance of only 2mΩ at a VGS of 10V, and is capable of handling drain currents (ID) of up to 320A. These features make the HY5110W-VB ideal for high-power and high-voltage power management and control applications.
HY5110W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for applications requiring high current and high voltage. This MOSFET has a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Manufactured using advanced trench technology, the HY5110W-VB has an extremely low on-resistance of only 2mΩ at a VGS of 10V, and is capable of handling drain currents (ID) of up to 320A. These features make the HY5110W-VB ideal for high-power and high-voltage power management and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Parameter description:
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 320A
- **Technology**: Trench technology
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 320A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules:
1. **High-efficiency power conversion**: HY5110W-VB is ideal for high-efficiency power conversion applications such as switch mode power supplies (SMPS) and DC-DC converters. Due to its extremely low on-resistance and high current handling capability, this MOSFET can significantly improve power conversion efficiency, reduce power consumption and heat generation, and ensure efficient operation of the power system.
2. **Motor drive**: In high-power motor drive systems, such as electric power steering systems (EPS) and high-power servo motor control, the high current carrying capacity and low on-resistance of HY5110W-VB enable it to effectively drive the motor, provide stable switching performance and excellent control efficiency.
3. **Power protection and control**: HY5110W-VB is suitable for power protection and control circuits, such as overcurrent protection and short-circuit protection systems. Its high current handling capability and low on-resistance can provide effective protection under high power conditions, improving the safety and reliability of the system.
4. **Automotive Electronics Application**: In automotive electronic systems, such as battery management systems (BMS) and other high-power on-board electronic devices, the HY5110W-VB is able to handle high current loads, ensure system stability and long-term reliability, and meet the stringent requirements of automotive electronics for high power and high efficiency.
With its high current carrying capacity, low on-resistance, and high voltage tolerance, the HY5110W-VB is suitable for high-efficiency power management, motor drive, power protection, and automotive electronics, providing excellent performance for a variety of high-power applications.
1. **High-efficiency power conversion**: HY5110W-VB is ideal for high-efficiency power conversion applications such as switch mode power supplies (SMPS) and DC-DC converters. Due to its extremely low on-resistance and high current handling capability, this MOSFET can significantly improve power conversion efficiency, reduce power consumption and heat generation, and ensure efficient operation of the power system.
2. **Motor drive**: In high-power motor drive systems, such as electric power steering systems (EPS) and high-power servo motor control, the high current carrying capacity and low on-resistance of HY5110W-VB enable it to effectively drive the motor, provide stable switching performance and excellent control efficiency.
3. **Power protection and control**: HY5110W-VB is suitable for power protection and control circuits, such as overcurrent protection and short-circuit protection systems. Its high current handling capability and low on-resistance can provide effective protection under high power conditions, improving the safety and reliability of the system.
4. **Automotive Electronics Application**: In automotive electronic systems, such as battery management systems (BMS) and other high-power on-board electronic devices, the HY5110W-VB is able to handle high current loads, ensure system stability and long-term reliability, and meet the stringent requirements of automotive electronics for high power and high efficiency.
With its high current carrying capacity, low on-resistance, and high voltage tolerance, the HY5110W-VB is suitable for high-efficiency power management, motor drive, power protection, and automotive electronics, providing excellent performance for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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