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HY5012W-VB Product details

Product introduction:

Product Introduction: HY5012W-VB

HY5012W-VB is a high current, high voltage handling single N-channel MOSFET in TO247 package. It is designed for high power supply and switching applications, with a drain-source voltage (VDS) of 100V and a gate drive voltage (VGS) of ±20V. HY5012W-VB uses advanced trench technology, provides a low on-resistance of 2mΩ, and can handle drain currents up to 320A. This makes HY5012W-VB perform well in power management and switching applications that require high efficiency and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 100V 3V 320A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 100V 3V 320A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 100V 3V 320A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description:

1. **Package type**: TO247
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 320A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 600W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 600nC
12. **Reverse recovery time (trr)**: 50ns

Domain and module applications:

Applications and module examples:

1. **High-power power switch**: The HY5012W-VB is suitable for high-power power switch modules, such as high-power DC-DC converters and switch mode power supplies (SMPS). Its low on-resistance and high current handling capability enable it to provide extremely high efficiency in high-power applications, reduce energy loss, and improve the overall performance of the system.

2. **Motor control system**: In motor control systems, the HY5012W-VB can handle very high current loads and is suitable for electric vehicle drive systems, industrial motor drives, and other high-power motor control applications. Its high current carrying capacity ensures efficient operation and stable control of the motor.

3. **Battery Management System (BMS)**: This MOSFET can be used in battery management systems, especially in electric vehicles and large energy storage systems. Its high current handling capability and low on-resistance optimize the battery charging and discharging process, improving the efficiency and reliability of the system.

4. **Automotive electronics**: HY5012W-VB is suitable for high-power switching applications in automotive electronic devices, such as power seat control, power windows, and on-board power management systems. Its high efficiency and reliability ensure the stability and performance of automotive electronic systems.

5. **Power inverter**: In photovoltaic systems and uninterruptible power supplies (UPS), HY5012W-VB, as a key component of power inverters, can handle high current and high power, ensure high efficiency and stability of the system, and achieve reliable power conversion and distribution.

The high current handling capability and low on-resistance of HY5012W-VB make it excel in various high-power applications, providing an efficient and reliable solution for power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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