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HY4903B6-VB Product details
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Product Introduction:
HY4903B6-VB is a high-performance dual N-channel MOSFET packaged in TO263-7L, designed for medium voltage and ultra-high current applications. The drain-source breakdown voltage of this MOSFET is 40V, which is suitable for medium voltage switching and power conversion applications. The on-resistance of HY4903B6-VB is extremely low, only 0.9mΩ (at VGS=10V), which can provide excellent power efficiency under high current conditions and significantly reduce power loss. Using advanced trench technology, this MOSFET has excellent switching performance and thermal stability, and is very suitable for high power handling applications.
HY4903B6-VB is a high-performance dual N-channel MOSFET packaged in TO263-7L, designed for medium voltage and ultra-high current applications. The drain-source breakdown voltage of this MOSFET is 40V, which is suitable for medium voltage switching and power conversion applications. The on-resistance of HY4903B6-VB is extremely low, only 0.9mΩ (at VGS=10V), which can provide excellent power efficiency under high current conditions and significantly reduce power loss. Using advanced trench technology, this MOSFET has excellent switching performance and thermal stability, and is very suitable for high power handling applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | 0.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Parameter description:
- **Model**: HY4903B6-VB
- **Package**: TO263-7L
- **Polarity**: Dual N-channel
- **Drain-source breakdown voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 0.9mΩ@VGS=10V
- **Maximum drain current (ID)**: 350A
- **Technology**: Trench
- **Model**: HY4903B6-VB
- **Package**: TO263-7L
- **Polarity**: Dual N-channel
- **Drain-source breakdown voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 0.9mΩ@VGS=10V
- **Maximum drain current (ID)**: 350A
- **Technology**: Trench
Domain and module applications：
Application areas and modules:
1. **High-efficiency switching power supply**: The extremely low on-resistance (0.9mΩ@VGS=10V) and high current capability (350A) of HY4903B6-VB make it very suitable for high-efficiency switching power supply (SMPS). In switch mode power supply (SMPS) and DC-DC converter, this MOSFET can significantly reduce power loss and improve power efficiency. It is particularly suitable for high-performance power adapters and power modules, improving the energy efficiency and stability of the overall system.
2. **Electric vehicles (EV) and charging facilities**: In electric vehicles and charging facilities, the dual N-channel configuration and high current handling capability of HY4903B6-VB enable it to stably control the battery charging and discharging process and be used in motor drive control systems. This MOSFET can handle currents up to 350A, ensuring the reliability and efficiency of electric vehicle systems, and is particularly suitable for electric vehicle battery management and charging modules.
3. **Industrial Automation and Motor Control**: In industrial automation equipment and motor drive systems, HY4903B6-VB provides a powerful dual MOSFET configuration, and its high current capability and low on-resistance make it stable under high current loads. It is suitable for power switches and control modules in motor controllers and automated production lines, which can improve the stability and efficiency of equipment.
4. **Photovoltaic Inverter and Energy Storage System**: In photovoltaic inverter and energy storage system, HY4903B6-VB can be used as an efficient power conversion switch. Its high current capability and low on-resistance enable it to effectively process the electrical energy of photovoltaic panels and convert it into usable electricity. It is suitable for power control and inverter modules in photovoltaic systems to improve the energy efficiency and reliability of the overall system.
The dual N-channel configuration, high current handling capability, extremely low on-resistance and excellent switching performance of the HY4903B6-VB enable it to perform well in high-power and high-efficiency applications, and is a key component in modern power management and power control systems.
1. **High-efficiency switching power supply**: The extremely low on-resistance (0.9mΩ@VGS=10V) and high current capability (350A) of HY4903B6-VB make it very suitable for high-efficiency switching power supply (SMPS). In switch mode power supply (SMPS) and DC-DC converter, this MOSFET can significantly reduce power loss and improve power efficiency. It is particularly suitable for high-performance power adapters and power modules, improving the energy efficiency and stability of the overall system.
2. **Electric vehicles (EV) and charging facilities**: In electric vehicles and charging facilities, the dual N-channel configuration and high current handling capability of HY4903B6-VB enable it to stably control the battery charging and discharging process and be used in motor drive control systems. This MOSFET can handle currents up to 350A, ensuring the reliability and efficiency of electric vehicle systems, and is particularly suitable for electric vehicle battery management and charging modules.
3. **Industrial Automation and Motor Control**: In industrial automation equipment and motor drive systems, HY4903B6-VB provides a powerful dual MOSFET configuration, and its high current capability and low on-resistance make it stable under high current loads. It is suitable for power switches and control modules in motor controllers and automated production lines, which can improve the stability and efficiency of equipment.
4. **Photovoltaic Inverter and Energy Storage System**: In photovoltaic inverter and energy storage system, HY4903B6-VB can be used as an efficient power conversion switch. Its high current capability and low on-resistance enable it to effectively process the electrical energy of photovoltaic panels and convert it into usable electricity. It is suitable for power control and inverter modules in photovoltaic systems to improve the energy efficiency and reliability of the overall system.
The dual N-channel configuration, high current handling capability, extremely low on-resistance and excellent switching performance of the HY4903B6-VB enable it to perform well in high-power and high-efficiency applications, and is a key component in modern power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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