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HY4703P-VB Product details

Product introduction:

1. HY4703P-VB Product Introduction
HY4703P-VB is a single N-channel power MOSFET in TO220 package, designed for high current and low voltage applications. Its drain-source voltage (VDS) is 30V and the gate-source voltage (VGS) is ±20V. This MOSFET adopts advanced Trench technology and has extremely low on-resistance. At VGS=4.5V, the on-resistance is 2.2mΩ, and it drops to 1mΩ at VGS=10V. HY4703P-VB can handle continuous drain currents of up to 260A, and its gate threshold voltage (Vth) is 1.7V. These characteristics make HY4703P-VB particularly suitable for power management and control applications that require high current and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 260A 1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 260A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 260A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. HY4703P-VB Detailed parameter description
- **Package type**: TO220
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.2mΩ @ VGS=4.5V
- 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 260A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

III. HY4703P-VB Application Fields and Modules
The high current handling capability and low on-resistance of HY4703P-VB enable it to excel in the following fields and modules:

1. **Power Management**: In power management systems, such as high-efficiency DC-DC converters and AC-DC power supplies, the low RDS(ON) of HY4703P-VB can significantly reduce energy loss and improve power conversion efficiency, and is suitable for application scenarios that require high current and low power consumption.

2. **Electric Vehicles**: This MOSFET is very suitable in the battery management system (BMS) and motor drive modules of electric vehicles. Its 260A current handling capability and low on-resistance ensure high efficiency and stability of electric vehicle systems, and is particularly suitable for the control of high-power loads.

3. **Computer and server power**: In computer and server power modules, HY4703P-VB can effectively handle high current loads, reduce energy loss, improve overall system efficiency and reliability, and is suitable for high-load power management applications.

4. **Industrial power system**: HY4703P-VB is suitable for various industrial power applications such as power distribution, load driving and power control modules. Its high current handling capability and low on-resistance make it excellent in industrial environments and suitable for handling high current and high power loads.

5. **Communication equipment**: In the power supply and power management modules of communication equipment, HY4703P-VB can stably handle high power loads, ensure high efficiency and low energy consumption of communication systems, and is an ideal choice for high power applications in communication systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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