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HY4504B6-VB Product details
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Product Introduction:
HY4504B6-VB is a high-performance dual N-channel MOSFET in TO263-7L package, suitable for high current and high efficiency applications. This MOSFET has two independent N-channel MOSFETs with a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. HY4504B6-VB is manufactured using advanced trench technology, and its on-resistance (RDS(ON)) is as low as 0.9mΩ at VGS of 10V, and it can handle a drain current (ID) of up to 350A. These features make HY4504B6-VB excellent in power management applications that require high current and high efficiency.
HY4504B6-VB is a high-performance dual N-channel MOSFET in TO263-7L package, suitable for high current and high efficiency applications. This MOSFET has two independent N-channel MOSFETs with a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. HY4504B6-VB is manufactured using advanced trench technology, and its on-resistance (RDS(ON)) is as low as 0.9mΩ at VGS of 10V, and it can handle a drain current (ID) of up to 350A. These features make HY4504B6-VB excellent in power management applications that require high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | 0.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Parameter description:
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 0.9mΩ @ VGS=10V
- **Drain current (ID)**: 350A
- **Technology**: Trench technology
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 0.9mΩ @ VGS=10V
- **Drain current (ID)**: 350A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules:
1. **High-efficiency power management system**: HY4504B6-VB is suitable for high-efficiency power management systems, such as switch mode power supplies (SMPS) and DC-DC converters. Due to its extremely low on-resistance and high current handling capability, this MOSFET can significantly improve the conversion efficiency of the power supply, reduce power consumption and heat generation, and thus optimize the performance of the power management system.
2. **Motor drive system**: In high-power motor drive applications, such as electric power steering systems (EPS) and high-power servo motors, the dual N-channel design and high current handling capability of HY4504B6-VB enable it to effectively drive the motor, provide stable switching performance and optimized control efficiency.
3. **Power protection and control circuits**: HY4504B6-VB is suitable for power protection and control circuits, such as overcurrent protection and short-circuit protection systems. Its high current carrying capacity and low on-resistance can protect the circuit under high power conditions and enhance the safety and reliability of the system.
4. **Automotive Electronics Application**: In automotive electronic systems, such as battery management systems (BMS) and other high-power on-board electronic devices, the HY4504B6-VB is able to handle high current loads, ensure system stability and long-term reliability, and meet the requirements of automotive electronics for high power and high efficiency.
With its high current handling capability, extremely low on-resistance, and dual N-channel design, the HY4504B6-VB is suitable for high-efficiency power management, motor drive, power protection, and automotive electronics, providing excellent performance for high-power applications.
1. **High-efficiency power management system**: HY4504B6-VB is suitable for high-efficiency power management systems, such as switch mode power supplies (SMPS) and DC-DC converters. Due to its extremely low on-resistance and high current handling capability, this MOSFET can significantly improve the conversion efficiency of the power supply, reduce power consumption and heat generation, and thus optimize the performance of the power management system.
2. **Motor drive system**: In high-power motor drive applications, such as electric power steering systems (EPS) and high-power servo motors, the dual N-channel design and high current handling capability of HY4504B6-VB enable it to effectively drive the motor, provide stable switching performance and optimized control efficiency.
3. **Power protection and control circuits**: HY4504B6-VB is suitable for power protection and control circuits, such as overcurrent protection and short-circuit protection systems. Its high current carrying capacity and low on-resistance can protect the circuit under high power conditions and enhance the safety and reliability of the system.
4. **Automotive Electronics Application**: In automotive electronic systems, such as battery management systems (BMS) and other high-power on-board electronic devices, the HY4504B6-VB is able to handle high current loads, ensure system stability and long-term reliability, and meet the requirements of automotive electronics for high power and high efficiency.
With its high current handling capability, extremely low on-resistance, and dual N-channel design, the HY4504B6-VB is suitable for high-efficiency power management, motor drive, power protection, and automotive electronics, providing excellent performance for high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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