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HY4008W-VB Product details
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1. HY4008W-VB Product Introduction
HY4008W-VB is a single N-channel power MOSFET in TO247 package, designed for high current and high voltage applications. This MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and adopts advanced Trench technology. The on-resistance of HY4008W-VB is 4mΩ at VGS=4.5V, and it drops to 2.8mΩ at VGS=10V. Its gate threshold voltage (Vth) is 3.5V, and it can handle a continuous drain current of up to 215A. These characteristics make HY4008W-VB very suitable for power management and control applications that require high power and high efficiency.
HY4008W-VB is a single N-channel power MOSFET in TO247 package, designed for high current and high voltage applications. This MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and adopts advanced Trench technology. The on-resistance of HY4008W-VB is 4mΩ at VGS=4.5V, and it drops to 2.8mΩ at VGS=10V. Its gate threshold voltage (Vth) is 3.5V, and it can handle a continuous drain current of up to 215A. These characteristics make HY4008W-VB very suitable for power management and control applications that require high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. HY4008W-VB Detailed parameter description
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO247
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. HY4008W-VB Application Fields and Modules
The high current handling capability and low on-resistance of HY4008W-VB give it significant advantages in the following fields and modules:
1. **Power Management**: This MOSFET is very effective in power management systems, such as DC-DC converters and AC-DC power supplies. Its low RDS(ON) can significantly reduce energy loss and improve power conversion efficiency, and is suitable for power management applications that require high efficiency.
2. **Electric Vehicles**: In the battery management system (BMS) and motor drive modules of electric vehicles, HY4008W-VB provides a current handling capability of up to 215A and low on-resistance, ensuring high efficiency and stability of electric vehicle systems, and is suitable for handling large currents and high power loads.
3. **Computer and Server Power**: HY4008W-VB excels in computer and server power modules, can handle high power loads, reduce energy loss, improve overall system efficiency and reliability, and is particularly suitable for high-load and high-efficiency power systems.
4. **Industrial Control**: Suitable for industrial power systems such as power distribution, load drive, and power control modules. The high current handling capability and low on-resistance of HY4008W-VB make it excellent in industrial applications that need to handle high current and high power.
5. **Communication Equipment**: In the power management module of communication equipment, HY4008W-VB can stably handle high power loads, ensure high efficiency and low energy consumption of the communication system, and is suitable for communication equipment that requires high power and high efficiency.
The high current handling capability and low on-resistance of HY4008W-VB give it significant advantages in the following fields and modules:
1. **Power Management**: This MOSFET is very effective in power management systems, such as DC-DC converters and AC-DC power supplies. Its low RDS(ON) can significantly reduce energy loss and improve power conversion efficiency, and is suitable for power management applications that require high efficiency.
2. **Electric Vehicles**: In the battery management system (BMS) and motor drive modules of electric vehicles, HY4008W-VB provides a current handling capability of up to 215A and low on-resistance, ensuring high efficiency and stability of electric vehicle systems, and is suitable for handling large currents and high power loads.
3. **Computer and Server Power**: HY4008W-VB excels in computer and server power modules, can handle high power loads, reduce energy loss, improve overall system efficiency and reliability, and is particularly suitable for high-load and high-efficiency power systems.
4. **Industrial Control**: Suitable for industrial power systems such as power distribution, load drive, and power control modules. The high current handling capability and low on-resistance of HY4008W-VB make it excellent in industrial applications that need to handle high current and high power.
5. **Communication Equipment**: In the power management module of communication equipment, HY4008W-VB can stably handle high power loads, ensure high efficiency and low energy consumption of the communication system, and is suitable for communication equipment that requires high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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