HY4008P-VB Product details
Product introduction:
HY4008P-VB is a high-performance single N-channel MOSFET in TO247 package type, designed for medium-to-high voltage and high current applications. Using advanced Trench technology, HY4008P-VB provides extremely low on-resistance and strong current handling capability, making it excel in high-efficiency power management and power conversion applications. The high current capability and high voltage tolerance of this MOSFET enable stable operation in systems requiring high power handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, DC-DC converters, motor control, high-power switches, automotive electronics
Domain and module applications:
1. **High-efficiency power management**: Due to its extremely low RDS(ON) and high current capability, HY4008P-VB is ideal for use in high-efficiency power management systems. For example, in high-power power modules and data center power systems, this MOSFET can significantly reduce power consumption, improve system efficiency, and optimize the power conversion process.
2. **DC-DC converter**: In DC-DC converter applications, HY4008P-VB provides efficient voltage conversion and stable power output, suitable for converter designs that require high current and high power density, helping to improve the overall performance and conversion efficiency of the system.
3. **Motor control system**: The high current handling capability and low on-resistance of HY4008P-VB make it an ideal choice for motor control systems, such as industrial motor drives and power tools. It can effectively manage high current loads and improve the stability and efficiency of motor control.
4. **High Power Switch**: This MOSFET can be used in a variety of high power switching applications such as power conversion and load switching, providing stable power switching and efficient load management. In systems that need to handle high currents, the HY4008P-VB ensures reliable power switching and efficient operation.
5. **Automotive Electronics**: In the field of automotive electronics, the HY4008P-VB is suitable for the powertrain and on-board power management modules of electric vehicles. Its high current carrying capacity and high voltage resistance enable it to cope with the complex needs in automotive electrical systems, providing high efficiency and high reliability.
Technical support:
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