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HY4004B-VB Product details
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Product Introduction:
HY4004B-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and low on-resistance. This MOSFET has a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. Manufactured using advanced trench technology, the HY4004B-VB has an extremely low on-resistance of only 2mΩ at a VGS of 10V and 2.5mΩ at a VGS of 4.5V, and is capable of handling drain currents (ID) of up to 150A. These features make the HY4004B-VB ideal for high-efficiency power supplies and high-power applications.
HY4004B-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and low on-resistance. This MOSFET has a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. Manufactured using advanced trench technology, the HY4004B-VB has an extremely low on-resistance of only 2mΩ at a VGS of 10V and 2.5mΩ at a VGS of 4.5V, and is capable of handling drain currents (ID) of up to 150A. These features make the HY4004B-VB ideal for high-efficiency power supplies and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Parameter description:
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application areas and modules:
1. **High-efficiency power management**: HY4004B-VB is ideal for high-efficiency power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can improve power conversion efficiency, reduce power consumption and heat, and improve the overall performance and reliability of the system.
2. **Motor drive**: In motor drive applications such as electric power steering systems (EPS) and servo motor control, HY4004B-VB can handle high current loads and ensure stable switching performance during motor startup and operation, thereby optimizing the efficiency and reliability of motor control.
3. **Power protection and control**: HY4004B-VB is suitable for power protection and control circuits such as overcurrent protection and short-circuit protection systems. Due to its high current handling capability and low on-resistance, this MOSFET can effectively protect the circuit under high power conditions and improve the safety and reliability of the system.
4. **Automotive Electronic Systems**: In automotive electronic applications, such as battery management systems (BMS) and other high-power on-board electronic devices, the HY4004B-VB is able to handle high current loads, ensure system stability and long-term reliability, and meet the stringent requirements of automotive electronics for high power and high efficiency.
With its high current carrying capacity and extremely low on-resistance, the HY4004B-VB provides excellent performance in the fields of efficient power management, motor drive, power protection, and automotive electronics, and is an ideal choice for high-power applications.
1. **High-efficiency power management**: HY4004B-VB is ideal for high-efficiency power management systems such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability can improve power conversion efficiency, reduce power consumption and heat, and improve the overall performance and reliability of the system.
2. **Motor drive**: In motor drive applications such as electric power steering systems (EPS) and servo motor control, HY4004B-VB can handle high current loads and ensure stable switching performance during motor startup and operation, thereby optimizing the efficiency and reliability of motor control.
3. **Power protection and control**: HY4004B-VB is suitable for power protection and control circuits such as overcurrent protection and short-circuit protection systems. Due to its high current handling capability and low on-resistance, this MOSFET can effectively protect the circuit under high power conditions and improve the safety and reliability of the system.
4. **Automotive Electronic Systems**: In automotive electronic applications, such as battery management systems (BMS) and other high-power on-board electronic devices, the HY4004B-VB is able to handle high current loads, ensure system stability and long-term reliability, and meet the stringent requirements of automotive electronics for high power and high efficiency.
With its high current carrying capacity and extremely low on-resistance, the HY4004B-VB provides excellent performance in the fields of efficient power management, motor drive, power protection, and automotive electronics, and is an ideal choice for high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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