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HY4004B6-VB Product details

Product introduction:

Product Introduction: HY4004B6-VB

HY4004B6-VB is a dual N-channel MOSFET in TO263-7L package, designed for high power and high efficiency applications. It has a drain-source voltage (VDS) of 40V and a gate drive voltage (VGS) of ±20V, providing excellent current handling capability and low on-resistance. The on-resistance of HY4004B6-VB is 1mΩ, and it can handle drain currents up to 200A. The use of advanced trench technology enables it to perform well in a variety of high power applications, providing stable and efficient power management solutions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263-7L Dual-N+N 40V 3V 200A 1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263-7L Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263-7L Dual-N+N 40V 3V 200A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263-7L Dual-N+N 40V 3V 200A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263-7L Dual-N+N
Detailed parameter description:

1. **Package type**: TO263-7L
2. **Configuration**: Dual N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 1mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 200A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 300W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 350nC
12. **Reverse recovery time (trr)**: 30ns

Domain and module applications:

Application fields and module examples:

1. **High-efficiency power management**: The HY4004B6-VB is suitable for high-efficiency power management modules such as DC-DC converters and high-power switch mode power supplies (SMPS). Its ultra-low on-resistance and high current handling capability enable it to have superior efficiency in high-power applications, significantly reducing energy losses and improving the overall performance of the system.

2. **Motor control system**: In motor control systems, the HY4004B6-VB can handle large current loads and is very suitable for high-power motor drive applications such as electric vehicle drive systems and industrial motor control. It provides stable current control to ensure efficient operation of the motor.

3. **Battery management system (BMS)**: This MOSFET can be used in battery management systems, especially in electric vehicles and energy storage systems. Its high current handling capability and low on-resistance enable it to optimize the battery charging and discharging process, improving the efficiency and reliability of the system.

4. **Automotive electronics**: HY4004B6-VB is suitable for high-power switching applications in automotive electronic modules, such as electric seat control and on-board power management systems. Its high efficiency and reliability ensure the stability and performance of automotive electronic systems.

5. **Power inverter**: In photovoltaic systems and uninterruptible power supplies (UPS), HY4004B6-VB can be used as a key component of power inverters. It can handle high current and high power, ensuring high efficiency and stability of the system, and helping to achieve reliable power conversion and distribution.

The high current carrying capacity and low on-resistance of HY4004B6-VB make it excel in various high-power applications, providing an efficient and reliable solution for power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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