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HY3906W-VB Product details
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1. HY3906W-VB Product Introduction
HY3906W-VB is a high-performance single N-channel power MOSFET that uses advanced trench technology and is packaged in TO247. This MOSFET is designed for applications that require high current and medium voltage, with excellent conduction performance and low switching losses. The high current handling capability and low on-resistance of HY3906W-VB enable it to perform well in high-power power management, load switching, and power conversion applications, making it an ideal choice for high performance and reliability in modern electronic devices.
HY3906W-VB is a high-performance single N-channel power MOSFET that uses advanced trench technology and is packaged in TO247. This MOSFET is designed for applications that require high current and medium voltage, with excellent conduction performance and low switching losses. The high current handling capability and low on-resistance of HY3906W-VB enable it to perform well in high-power power management, load switching, and power conversion applications, making it an ideal choice for high performance and reliability in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 3V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. HY3906W-VB Detailed parameter description
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=4.5V, 3mΩ@VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology
- **Package**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=4.5V, 3mΩ@VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **Power management**: The high current handling capability and low on-resistance of HY3906W-VB make it very suitable for efficient power management systems. Especially in DC-DC converters and switching power supplies, this MOSFET can effectively reduce power consumption, improve power efficiency, and provide reliable power conversion.
2. **Motor drive**: In high-current motor drive applications such as electric vehicles, power tools, and industrial motor control, the strong driving capability and low on-resistance of HY3906W-VB ensure smooth and efficient operation of the motor. It can handle high current loads and improve the overall performance and reliability of the system.
3. **Load switch**: As a load switch, HY3906W-VB is capable of handling high-power loads and is widely used in smart homes, computer peripherals, and other high-power devices. Its high current capability and low power consumption characteristics enable it to provide efficient performance in load switch applications.
4. **Power conversion and amplification**: In power conversion and amplification modules, such as high-power audio systems and power amplifiers, the low on-resistance and high current capability of the HY3906W-VB can effectively reduce energy loss and improve the power handling capability and stability of the system. It is an ideal choice for high-power applications and can provide excellent performance and reliability.
With its excellent electrical characteristics and high reliability, the HY3906W-VB provides an excellent solution for a variety of high-power and high-current applications, suitable for key scenarios to improve system efficiency and stability.
1. **Power management**: The high current handling capability and low on-resistance of HY3906W-VB make it very suitable for efficient power management systems. Especially in DC-DC converters and switching power supplies, this MOSFET can effectively reduce power consumption, improve power efficiency, and provide reliable power conversion.
2. **Motor drive**: In high-current motor drive applications such as electric vehicles, power tools, and industrial motor control, the strong driving capability and low on-resistance of HY3906W-VB ensure smooth and efficient operation of the motor. It can handle high current loads and improve the overall performance and reliability of the system.
3. **Load switch**: As a load switch, HY3906W-VB is capable of handling high-power loads and is widely used in smart homes, computer peripherals, and other high-power devices. Its high current capability and low power consumption characteristics enable it to provide efficient performance in load switch applications.
4. **Power conversion and amplification**: In power conversion and amplification modules, such as high-power audio systems and power amplifiers, the low on-resistance and high current capability of the HY3906W-VB can effectively reduce energy loss and improve the power handling capability and stability of the system. It is an ideal choice for high-power applications and can provide excellent performance and reliability.
With its excellent electrical characteristics and high reliability, the HY3906W-VB provides an excellent solution for a variety of high-power and high-current applications, suitable for key scenarios to improve system efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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