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HY3810W-VB Product details
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HY3810W-VB Product Introduction
HY3810W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent current handling capabilities, making it excellent in high-efficiency power management and power conversion. With its high voltage and high current characteristics, HY3810W-VB is particularly suitable for applications that require high power handling and high reliability.
HY3810W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. This MOSFET uses Trench technology to provide extremely low on-resistance and excellent current handling capabilities, making it excellent in high-efficiency power management and power conversion. With its high voltage and high current characteristics, HY3810W-VB is particularly suitable for applications that require high power handling and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
HY3810W-VB parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, DC-DC converters, motor control, high-power switches
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, DC-DC converters, motor control, high-power switches
Domain and module applications：
Application fields and modules of HY3810W-VB
1. **High-efficiency power management**: The low RDS(ON) and high current carrying capacity of HY3810W-VB make it very suitable for high-efficiency power management systems, such as large power modules and data center power systems, which can significantly reduce power consumption and improve the overall efficiency of the system.
2. **DC-DC converter**: In DC-DC converter applications, this MOSFET provides efficient voltage conversion and stable power output, suitable for high current and high power density converter design, ensuring conversion efficiency and performance.
3. **Motor control system**: Due to its high current capability and low on-resistance, HY3810W-VB is suitable for motor control systems such as industrial motor drives and power tools, which can effectively manage current and improve the stability and performance of motor control.
4. **High-power switching**: In switching applications that need to handle high power, such as power conversion and load switching, the high voltage and high current handling capabilities of the HY3810W-VB make it an ideal choice, providing reliable power switching and efficient load management.
5. **Automotive electronics**: This MOSFET also performs well in automotive electronic systems, such as the powertrain and on-board power management modules of electric vehicles. Its high current carrying capacity and high voltage resistance make it suitable for automotive electrical equipment that requires high performance and reliability.
1. **High-efficiency power management**: The low RDS(ON) and high current carrying capacity of HY3810W-VB make it very suitable for high-efficiency power management systems, such as large power modules and data center power systems, which can significantly reduce power consumption and improve the overall efficiency of the system.
2. **DC-DC converter**: In DC-DC converter applications, this MOSFET provides efficient voltage conversion and stable power output, suitable for high current and high power density converter design, ensuring conversion efficiency and performance.
3. **Motor control system**: Due to its high current capability and low on-resistance, HY3810W-VB is suitable for motor control systems such as industrial motor drives and power tools, which can effectively manage current and improve the stability and performance of motor control.
4. **High-power switching**: In switching applications that need to handle high power, such as power conversion and load switching, the high voltage and high current handling capabilities of the HY3810W-VB make it an ideal choice, providing reliable power switching and efficient load management.
5. **Automotive electronics**: This MOSFET also performs well in automotive electronic systems, such as the powertrain and on-board power management modules of electric vehicles. Its high current carrying capacity and high voltage resistance make it suitable for automotive electrical equipment that requires high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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