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HY3708W-VB Product details
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1. HY3708W-VB Product Introduction
HY3708W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high current and high efficiency applications. This MOSFET adopts advanced trench technology, with a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 4mΩ at a gate voltage of 4.5V, while at a gate voltage of 10V, the on-resistance drops to 2.8mΩ, supporting a drain current (ID) of up to 215A. With its excellent current carrying capacity and low conduction loss, HY3708W-VB is suitable for applications requiring high power and high efficiency.
HY3708W-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high current and high efficiency applications. This MOSFET adopts advanced trench technology, with a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 4mΩ at a gate voltage of 4.5V, while at a gate voltage of 10V, the on-resistance drops to 2.8mΩ, supporting a drain current (ID) of up to 215A. With its excellent current carrying capacity and low conduction loss, HY3708W-VB is suitable for applications requiring high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. HY3708W-VB Detailed Parameters
- **Package Type**: TO247
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 215A
- **Technology Type**: Trench
- **Typical Operating Temperature Range**: -55°C to 150°C
- **Package Type**: TO247
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 215A
- **Technology Type**: Trench
- **Typical Operating Temperature Range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
1. **High-power DC-DC converter**
In high-power DC-DC converters, the low on-resistance and high current handling capability of HY3708W-VB significantly improve conversion efficiency. It is suitable for use in high-power power modules and energy management systems, helping to reduce energy loss and improve system stability.
2. **Electric vehicle drive system**
For the drive system of electric vehicles, HY3708W-VB can handle currents up to 215A, providing strong power support. Its low on-resistance optimizes the power conversion efficiency of the motor drive module and improves the performance and endurance of electric vehicles.
3. **Power management system**
In power management systems, the efficient current switching capability of this MOSFET makes it an ideal choice. Its low on-resistance is suitable for high-power switching power supplies and power distribution modules, ensuring stable operation of the system under high load conditions and reducing energy loss.
4. **Industrial Automation**
In industrial automation equipment, the HY3708W-VB is capable of handling high-power loads and is suitable for industrial power control and high-power load management. Its high current handling capability and low power consumption improve the efficiency and reliability of industrial control systems.
With its high current carrying capacity and low on-resistance, the HY3708W-VB provides efficient and reliable switching solutions in high-power DC-DC converters, electric vehicle drive systems, power management systems, and industrial automation.
1. **High-power DC-DC converter**
In high-power DC-DC converters, the low on-resistance and high current handling capability of HY3708W-VB significantly improve conversion efficiency. It is suitable for use in high-power power modules and energy management systems, helping to reduce energy loss and improve system stability.
2. **Electric vehicle drive system**
For the drive system of electric vehicles, HY3708W-VB can handle currents up to 215A, providing strong power support. Its low on-resistance optimizes the power conversion efficiency of the motor drive module and improves the performance and endurance of electric vehicles.
3. **Power management system**
In power management systems, the efficient current switching capability of this MOSFET makes it an ideal choice. Its low on-resistance is suitable for high-power switching power supplies and power distribution modules, ensuring stable operation of the system under high load conditions and reducing energy loss.
4. **Industrial Automation**
In industrial automation equipment, the HY3708W-VB is capable of handling high-power loads and is suitable for industrial power control and high-power load management. Its high current handling capability and low power consumption improve the efficiency and reliability of industrial control systems.
With its high current carrying capacity and low on-resistance, the HY3708W-VB provides efficient and reliable switching solutions in high-power DC-DC converters, electric vehicle drive systems, power management systems, and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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