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HY3608B-VB Product details
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1. HY3608B-VB Product Introduction
HY3608B-VB is a single N-channel power MOSFET in TO263 package, designed for high current and high voltage applications. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and adopts advanced Trench technology. The on-resistance of HY3608B-VB is 10mΩ at VGS=4.5V, which is reduced to 5mΩ at VGS=10V, and can handle a continuous drain current of up to 215A. Its gate threshold voltage (Vth) is 3V, which makes HY3608B-VB particularly suitable for power management and control applications that require high current and low power consumption.
HY3608B-VB is a single N-channel power MOSFET in TO263 package, designed for high current and high voltage applications. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and adopts advanced Trench technology. The on-resistance of HY3608B-VB is 10mΩ at VGS=4.5V, which is reduced to 5mΩ at VGS=10V, and can handle a continuous drain current of up to 215A. Its gate threshold voltage (Vth) is 3V, which makes HY3608B-VB particularly suitable for power management and control applications that require high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HY3608B-VB Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 215A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. HY3608B-VB Application Fields and Modules
The high current handling capability and low on-resistance of HY3608B-VB give it significant advantages in the following fields and modules:
1. **Power Management**: This MOSFET performs well in high-performance power management modules, such as DC-DC converters and AC-DC power supplies. Its low RDS(ON) can reduce energy loss and improve power conversion efficiency, and is suitable for applications requiring efficient power transmission.
2. **Electric Vehicle**: HY3608B-VB can be used in the battery management system (BMS) and motor drive module of electric vehicles. Its 215A current handling capability and low on-resistance ensure the stability and high efficiency of electric vehicle systems, and is an ideal choice for high-power applications in electric vehicles.
3. **Computer and server power supplies**: In the power management systems of computers and servers, the HY3608B-VB is able to handle high-power loads and provide stable power output, and the low-power design helps reduce energy loss and improve the overall efficiency and reliability of the power supply.
4. **Industrial power systems**: This MOSFET is suitable for a variety of industrial power applications, including power distribution, load driving, and power control. In industrial environments that need to handle high currents and high power, the HY3608B-VB provides efficient and stable performance.
5. **Communication equipment**: In the power modules of communication equipment, the HY3608B-VB is able to handle high-power loads, ensuring that the equipment maintains low energy consumption while being highly efficient, and is suitable for high-power and high-efficiency communication systems.
The high current handling capability and low on-resistance of HY3608B-VB give it significant advantages in the following fields and modules:
1. **Power Management**: This MOSFET performs well in high-performance power management modules, such as DC-DC converters and AC-DC power supplies. Its low RDS(ON) can reduce energy loss and improve power conversion efficiency, and is suitable for applications requiring efficient power transmission.
2. **Electric Vehicle**: HY3608B-VB can be used in the battery management system (BMS) and motor drive module of electric vehicles. Its 215A current handling capability and low on-resistance ensure the stability and high efficiency of electric vehicle systems, and is an ideal choice for high-power applications in electric vehicles.
3. **Computer and server power supplies**: In the power management systems of computers and servers, the HY3608B-VB is able to handle high-power loads and provide stable power output, and the low-power design helps reduce energy loss and improve the overall efficiency and reliability of the power supply.
4. **Industrial power systems**: This MOSFET is suitable for a variety of industrial power applications, including power distribution, load driving, and power control. In industrial environments that need to handle high currents and high power, the HY3608B-VB provides efficient and stable performance.
5. **Communication equipment**: In the power modules of communication equipment, the HY3608B-VB is able to handle high-power loads, ensuring that the equipment maintains low energy consumption while being highly efficient, and is suitable for high-power and high-efficiency communication systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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