中文
English
HY3606B6-VB Product details
Back to previous pageProduct introduction：
1. HY3606B6-VB Product Introduction
HY3606B6-VB is a high-performance dual N-channel power MOSFET packaged in TO263-7L. This MOSFET is designed for high current and high efficiency applications, with a maximum drain-source voltage of 60V and a drain current of up to 150A. Its on-resistance at 10V gate-source voltage is only 2mΩ, ensuring extremely low power loss and excellent thermal performance. HY3606B6-VB uses Trench technology, providing excellent switching performance and efficient energy conversion, and is suitable for power management systems and high power applications that require high current and high efficiency.
HY3606B6-VB is a high-performance dual N-channel power MOSFET packaged in TO263-7L. This MOSFET is designed for high current and high efficiency applications, with a maximum drain-source voltage of 60V and a drain current of up to 150A. Its on-resistance at 10V gate-source voltage is only 2mΩ, ensuring extremely low power loss and excellent thermal performance. HY3606B6-VB uses Trench technology, providing excellent switching performance and efficient energy conversion, and is suitable for power management systems and high power applications that require high current and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. HY3606B6-VB Detailed Parameter Description
| Parameters| Description|
|-----------------------|-----------------------------------------|
| **Package Type** | TO263-7L |
| **Configuration** | Dual N-channel|
| **Maximum Drain-Source Voltage (VDS)** | 60V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Gate Threshold Voltage (Vth)** | 3V |
| **On-Resistance (RDS(ON))** | 2mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 150A |
| **Technology** | Trench Technology|
| **Power Consumption** | Low Conduction Loss, High Switching Efficiency|
| **Typical Applications** | Power Management, DC-DC Converters, High Power Switches, etc.|
| Parameters| Description|
|-----------------------|-----------------------------------------|
| **Package Type** | TO263-7L |
| **Configuration** | Dual N-channel|
| **Maximum Drain-Source Voltage (VDS)** | 60V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Gate Threshold Voltage (Vth)** | 3V |
| **On-Resistance (RDS(ON))** | 2mΩ (@VGS = 10V) |
| **Continuous Drain Current (ID)** | 150A |
| **Technology** | Trench Technology|
| **Power Consumption** | Low Conduction Loss, High Switching Efficiency|
| **Typical Applications** | Power Management, DC-DC Converters, High Power Switches, etc.|
Domain and module applications：
3. Application fields and module examples
1. **Power management system**
HY3606B6-VB is particularly suitable for high-current power management systems, such as high-efficiency DC-DC converters and power distribution modules. Its dual N-channel design and extremely low on-resistance enable it to handle large currents and significantly reduce power losses, improving overall power efficiency.
2. **High-power switching applications**
In high-power switching applications, such as industrial motor drives and high-power load switches, HY3606B6-VB provides high current handling capabilities and low conduction losses, ensuring stability and efficiency under high load conditions, and is suitable for use in power amplifiers and other high-power devices.
3. **Electric vehicles**
In the battery management system and electric drive of electric vehicles, HY3606B6-VB can be used for current control and switch management. Its high current capability and low on-resistance can effectively improve the efficiency of battery management and the performance of the electric drive system, enhancing the overall reliability of the vehicle.
4. **Servers and computing devices**
For servers and computing devices that require high power management, HY3606B6-VB can be used as a key switching element in power modules. Its low on-resistance and high current capability help improve the energy efficiency of computing devices, reduce heat generation, and ensure stable operation of the equipment.
1. **Power management system**
HY3606B6-VB is particularly suitable for high-current power management systems, such as high-efficiency DC-DC converters and power distribution modules. Its dual N-channel design and extremely low on-resistance enable it to handle large currents and significantly reduce power losses, improving overall power efficiency.
2. **High-power switching applications**
In high-power switching applications, such as industrial motor drives and high-power load switches, HY3606B6-VB provides high current handling capabilities and low conduction losses, ensuring stability and efficiency under high load conditions, and is suitable for use in power amplifiers and other high-power devices.
3. **Electric vehicles**
In the battery management system and electric drive of electric vehicles, HY3606B6-VB can be used for current control and switch management. Its high current capability and low on-resistance can effectively improve the efficiency of battery management and the performance of the electric drive system, enhancing the overall reliability of the vehicle.
4. **Servers and computing devices**
For servers and computing devices that require high power management, HY3606B6-VB can be used as a key switching element in power modules. Its low on-resistance and high current capability help improve the energy efficiency of computing devices, reduce heat generation, and ensure stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
