HY3506P-VB Product details
Product introduction:
HY3506P-VB is a high-performance N-channel MOSFET in TO220F package, designed to handle high current and high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, supporting a drain current of up to 210A. Its gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 5mΩ, while it is reduced to 2.6mΩ at a gate-source voltage of 10V. HY3506P-VB uses Trench technology to provide lower conduction losses and higher power efficiency. Its superior performance makes it suitable for a variety of high-power power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | 2.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 5mΩ@VGS=4.5V
- 2.6mΩ@VGS=10V
7. **Drain current (ID)**: 210A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: 350A (10us)
Domain and module applications:
1. **High-power switching power supply**: HY3506P-VB is particularly suitable for use as a switching element in high-power switching power supplies due to its high current carrying capacity and low on-resistance. In such applications, it can effectively reduce energy loss and improve power conversion efficiency, and is widely used in industrial power supplies, computer power supplies, and high-power chargers.
2. **DC-DC converter**: This MOSFET can be used as an efficient switch in a DC-DC converter to handle large current loads and provide stable voltage output. Its low RDS(ON) and high current handling capabilities help improve conversion efficiency, reduce power loss, and are used in computer power modules, communication equipment power supplies, and electric vehicle power systems.
3. **Electric vehicle drive system**: The high current handling capability and low on-resistance characteristics of HY3506P-VB make it suitable for use in electric vehicle motor drive modules. It can handle large current loads in motor drives, ensure efficient and stable operation of electric vehicles, and improve the overall performance and reliability of the system.
4. **Inverter and Power Management**: In inverter and power management systems, HY3506P-VB can handle high power loads as an efficient switch. It helps achieve stable power output and improves the overall efficiency and reliability of the inverter and power system.
The excellent performance of HY3506P-VB makes it widely applicable in various high current and high power applications, and it is an important component in power electronic systems.
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