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HY3408MF-VB Product details
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1. HY3408MF-VB Product Introduction
HY3408MF-VB is a single N-channel power MOSFET in a TO220F package, designed for high voltage and high current applications. The MOSFET provides a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. Using advanced Trench technology, the on-resistance of HY3408MF-VB is 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V. Its gate threshold voltage (Vth) is 3V and can handle a continuous drain current of up to 75A. These features make HY3408MF-VB particularly suitable for power management systems and power control applications that require high power and high efficiency.
HY3408MF-VB is a single N-channel power MOSFET in a TO220F package, designed for high voltage and high current applications. The MOSFET provides a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. Using advanced Trench technology, the on-resistance of HY3408MF-VB is 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V. Its gate threshold voltage (Vth) is 3V and can handle a continuous drain current of up to 75A. These features make HY3408MF-VB particularly suitable for power management systems and power control applications that require high power and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HY3408MF-VB Detailed parameter description
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. HY3408MF-VB Application Fields and Modules
The high current handling capability and low on-resistance of HY3408MF-VB make it very suitable for the following fields and modules:
1. **Power Management**: HY3408MF-VB performs well in high-performance power modules, such as DC-DC converters and AC-DC power supplies, enabling efficient power conversion and management, reducing power consumption and improving overall system efficiency.
2. **Electric Vehicle**: This MOSFET provides up to 75A current handling capability in the battery management system (BMS) and motor drive modules of electric vehicles, ensuring high efficiency and stability of electric vehicle systems.
3. **Computer and Server Power**: In computer and server power modules, HY3408MF-VB can stably handle high-power loads, ensuring efficient operation and reliability of the power supply and reducing energy loss.
4. **Industrial Control**: Suitable for various industrial power supplies and power control systems, especially in application scenarios that need to handle large currents and high powers, HY3408MF-VB provides stable and efficient current control capabilities.
5. **Communication Equipment**: In the power management and power amplifier modules of communication equipment, HY3408MF-VB can effectively handle high-power loads, ensuring high performance and low energy consumption of the equipment.
The high current handling capability and low on-resistance of HY3408MF-VB make it very suitable for the following fields and modules:
1. **Power Management**: HY3408MF-VB performs well in high-performance power modules, such as DC-DC converters and AC-DC power supplies, enabling efficient power conversion and management, reducing power consumption and improving overall system efficiency.
2. **Electric Vehicle**: This MOSFET provides up to 75A current handling capability in the battery management system (BMS) and motor drive modules of electric vehicles, ensuring high efficiency and stability of electric vehicle systems.
3. **Computer and Server Power**: In computer and server power modules, HY3408MF-VB can stably handle high-power loads, ensuring efficient operation and reliability of the power supply and reducing energy loss.
4. **Industrial Control**: Suitable for various industrial power supplies and power control systems, especially in application scenarios that need to handle large currents and high powers, HY3408MF-VB provides stable and efficient current control capabilities.
5. **Communication Equipment**: In the power management and power amplifier modules of communication equipment, HY3408MF-VB can effectively handle high-power loads, ensuring high performance and low energy consumption of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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