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HY3408AB-VB Product details
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1. HY3408AB-VB Product Introduction
HY3408AB-VB is a single N-channel MOSFET in TO263 package, designed to handle high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, supporting drain currents up to 215A. The MOSFET has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of 3V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 10mΩ, while it is reduced to 5mΩ at a gate-source voltage of 10V. HY3408AB-VB uses Trench technology to reduce conduction losses and improve power efficiency. This MOSFET is suitable for applications such as high-power switching, power management, and high-current load driving.
HY3408AB-VB is a single N-channel MOSFET in TO263 package, designed to handle high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, supporting drain currents up to 215A. The MOSFET has a gate-source voltage (VGS) range of ±20V and a threshold voltage (Vth) of 3V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 10mΩ, while it is reduced to 5mΩ at a gate-source voltage of 10V. HY3408AB-VB uses Trench technology to reduce conduction losses and improve power efficiency. This MOSFET is suitable for applications such as high-power switching, power management, and high-current load driving.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. HY3408AB-VB Detailed parameter description
1. **Package type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 5mΩ@VGS=10V
7. **Drain current (ID)**: 215A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: 350A (10us)
1. **Package type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 5mΩ@VGS=10V
7. **Drain current (ID)**: 215A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C to +175°C
10. **Maximum pulse current**: 350A (10us)
Domain and module applications：
III. Application fields and module examples
1. **High-power switching power supply**: The high current handling capability and low on-resistance of HY3408AB-VB make it very suitable for use in high-power switching power supplies. It can effectively handle large current loads and improve the efficiency and stability of the power supply. It is commonly used in industrial power modules, server power systems, and high-power chargers.
2. **DC-DC converter**: In DC-DC converters, the low RDS(ON) and high current capability of this MOSFET make it an ideal switching element. It can improve conversion efficiency and reduce energy loss. It is widely used in computer power supplies, communication equipment power supplies, and electric vehicle power systems.
3. **Electric vehicle drive system**: The high current carrying capacity and high withstand voltage characteristics of HY3408AB-VB make it suitable for the motor drive module of electric vehicles. It can handle large current loads in motor drives and ensure efficient and stable operation of electric vehicles.
4. **Inverter and power management**: This MOSFET is also suitable for inverters and power management systems. In these applications, the HY3408AB-VB can act as an efficient switch, handle high power loads, provide stable power output, and help improve the overall performance and efficiency of the system.
The design features of the HY3408AB-VB enable it to excel in a variety of high current and high power applications, and is a key component in many power electronic systems.
1. **High-power switching power supply**: The high current handling capability and low on-resistance of HY3408AB-VB make it very suitable for use in high-power switching power supplies. It can effectively handle large current loads and improve the efficiency and stability of the power supply. It is commonly used in industrial power modules, server power systems, and high-power chargers.
2. **DC-DC converter**: In DC-DC converters, the low RDS(ON) and high current capability of this MOSFET make it an ideal switching element. It can improve conversion efficiency and reduce energy loss. It is widely used in computer power supplies, communication equipment power supplies, and electric vehicle power systems.
3. **Electric vehicle drive system**: The high current carrying capacity and high withstand voltage characteristics of HY3408AB-VB make it suitable for the motor drive module of electric vehicles. It can handle large current loads in motor drives and ensure efficient and stable operation of electric vehicles.
4. **Inverter and power management**: This MOSFET is also suitable for inverters and power management systems. In these applications, the HY3408AB-VB can act as an efficient switch, handle high power loads, provide stable power output, and help improve the overall performance and efficiency of the system.
The design features of the HY3408AB-VB enable it to excel in a variety of high current and high power applications, and is a key component in many power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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