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HY3403B-VB Product details
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1. HY3403B-VB Product Introduction
HY3403B-VB is a single N-channel power MOSFET that uses advanced trench technology and is packaged in TO263. Its low on-resistance, high current handling capability, and high-speed switching characteristics enable it to excel in a variety of power management, load switching, and power conversion applications. This MOSFET is designed for systems that require high efficiency and low power consumption, and is particularly suitable for high-power applications in modern electronic devices.
HY3403B-VB is a single N-channel power MOSFET that uses advanced trench technology and is packaged in TO263. Its low on-resistance, high current handling capability, and high-speed switching characteristics enable it to excel in a variety of power management, load switching, and power conversion applications. This MOSFET is designed for systems that require high efficiency and low power consumption, and is particularly suitable for high-power applications in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HY3403B-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3.2mΩ@VGS=4.5V, 2.3mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3.2mΩ@VGS=4.5V, 2.3mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **Power management**: The low on-resistance and high current handling capability of HY3403B-VB make it an excellent performer in power management systems. Especially when used in DC-DC converters, switching power supplies and battery management modules, it can significantly improve system efficiency and reduce switching losses and conduction losses.
2. **Motor drive**: This MOSFET is suitable for driving high-power motors, especially in electric vehicles, power tools and industrial automation. The high current handling capability of HY3403B-VB can provide a stable drive current to ensure efficient operation of the motor.
3. **Load switch**: As an efficient load switch, HY3403B-VB is suitable for smart home devices and consumer electronics. Its low on-resistance and high-speed switching capability enable it to reliably handle high-power loads, improving the response speed and overall energy efficiency of the device.
4. **Power amplification and conversion**: In power amplification and conversion modules, such as high-power audio systems, communication equipment, and other systems that require efficient power transmission, the HY3403B-VB provides excellent power handling capabilities, reduces switching losses and power consumption, and ensures system reliability and long-term operation.
With its low on-resistance, high current carrying capacity, and fast switching characteristics, the HY3403B-VB is widely used in a variety of high-power and high-efficiency application scenarios, and is an ideal choice for systems with demanding performance requirements.
1. **Power management**: The low on-resistance and high current handling capability of HY3403B-VB make it an excellent performer in power management systems. Especially when used in DC-DC converters, switching power supplies and battery management modules, it can significantly improve system efficiency and reduce switching losses and conduction losses.
2. **Motor drive**: This MOSFET is suitable for driving high-power motors, especially in electric vehicles, power tools and industrial automation. The high current handling capability of HY3403B-VB can provide a stable drive current to ensure efficient operation of the motor.
3. **Load switch**: As an efficient load switch, HY3403B-VB is suitable for smart home devices and consumer electronics. Its low on-resistance and high-speed switching capability enable it to reliably handle high-power loads, improving the response speed and overall energy efficiency of the device.
4. **Power amplification and conversion**: In power amplification and conversion modules, such as high-power audio systems, communication equipment, and other systems that require efficient power transmission, the HY3403B-VB provides excellent power handling capabilities, reduces switching losses and power consumption, and ensures system reliability and long-term operation.
With its low on-resistance, high current carrying capacity, and fast switching characteristics, the HY3403B-VB is widely used in a variety of high-power and high-efficiency application scenarios, and is an ideal choice for systems with demanding performance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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