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HY3306B-VB Product details
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HY3306B-VB Product Introduction
HY3306B-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The device uses Trench technology to provide extremely low on-resistance (only 4mΩ @ VGS=10V), making it excellent in the field of efficient power management and power conversion, especially for applications requiring high current handling capabilities. The product has good durability and high performance, suitable for a wide range of industrial and consumer electronics applications.
HY3306B-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The device uses Trench technology to provide extremely low on-resistance (only 4mΩ @ VGS=10V), making it excellent in the field of efficient power management and power conversion, especially for applications requiring high current handling capabilities. The product has good durability and high performance, suitable for a wide range of industrial and consumer electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HY3306B-VB parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, DC-DC converters, motor control, load switches, automotive electronics
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, DC-DC converters, motor control, load switches, automotive electronics
Domain and module applications：
Application fields and modules of HY3306B-VB
1. **Efficient power management**: The low RDS(ON) and high current handling capability of HY3306B-VB make it very efficient in high-power power management systems, such as power modules in servers and data centers, which can significantly reduce power consumption and heat, and improve the overall efficiency of the system.
2. **DC-DC converter**: This MOSFET is suitable for high-current DC-DC converter design, providing stable voltage regulation and efficient power conversion, and performs well in application scenarios requiring high power density.
3. **Motor control system**: The high current carrying capacity and low conduction loss of HY3306B-VB make it an ideal choice for motor drive and control systems, especially in industrial motor drives or power tools that require high power.
4. **Automotive electronics**: In the field of automotive electronics, HY3306B-VB can be used in power control systems, on-board power management, and electric drive modules for electric vehicles. Its high current capability and high voltage resistance make it ideal for automotive electronic devices that require high reliability and high performance.
5. **Load Switch**: This MOSFET can be used as a load switch to provide efficient power switching and protection in various high current load applications (such as industrial control, smart grid systems).
1. **Efficient power management**: The low RDS(ON) and high current handling capability of HY3306B-VB make it very efficient in high-power power management systems, such as power modules in servers and data centers, which can significantly reduce power consumption and heat, and improve the overall efficiency of the system.
2. **DC-DC converter**: This MOSFET is suitable for high-current DC-DC converter design, providing stable voltage regulation and efficient power conversion, and performs well in application scenarios requiring high power density.
3. **Motor control system**: The high current carrying capacity and low conduction loss of HY3306B-VB make it an ideal choice for motor drive and control systems, especially in industrial motor drives or power tools that require high power.
4. **Automotive electronics**: In the field of automotive electronics, HY3306B-VB can be used in power control systems, on-board power management, and electric drive modules for electric vehicles. Its high current capability and high voltage resistance make it ideal for automotive electronic devices that require high reliability and high performance.
5. **Load Switch**: This MOSFET can be used as a load switch to provide efficient power switching and protection in various high current load applications (such as industrial control, smart grid systems).
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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