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HY3210B-VB Product details

Product introduction:

Product Introduction: HY3210B-VB
HY3210B-VB is a high current, high voltage handling single N-channel MOSFET in TO263 package, suitable for high power management and power switching applications. The device has a drain-source voltage (VDS) of 100V and a gate drive voltage (VGS) of ±20V. It has excellent on-resistance (RDS(ON)) performance and can provide efficient conduction capability even at lower gate voltages. HY3210B-VB uses trench technology to provide excellent conduction and switching performance, making it ideal for high current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 2.5V 100A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description:
1. **Package type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate drive voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench technology (Trench)
9. **Maximum power consumption**: 300W
10. **Operating temperature range**: -55°C to 150°C
11. **Gate charge (Qg)**: 130nC
12. **Reverse recovery time (trr)**: 60ns

Domain and module applications:

Application fields and module examples:
1. **Switching Power Supply (SMPS)**: HY3210B-VB is suitable for high-power conversion modules in switching power supplies. Its 100V withstand voltage and low on-resistance enable it to operate in high-efficiency, high-frequency converters, thereby reducing energy loss and improving system efficiency.

2. **Motor Control System**: In industrial and automotive motor control systems, this MOSFET can withstand high current loads and provide stable power transmission, which is particularly suitable for power tools, electric vehicle drive modules, and other motor control scenarios that require high current.

3. **Battery Management System (BMS)**: HY3210B-VB can be used in battery management modules for electric vehicles and energy storage systems to ensure battery stability and efficiency by controlling the charging and discharging process, and support high-current charging applications.

4. **Automotive Electronics**: This MOSFET can be used in automotive power management modules, on-board DC-DC converters, electric pumps, fan control and other applications, and can provide efficient power management and switching performance in automotive electronic systems.

5. **Solar Inverters and Photovoltaic Systems**: The HY3210B-VB can be used in inverter modules in solar power generation. With its high voltage and high current handling capabilities, it ensures efficient power conversion and reduces system power loss.

The HY3210B-VB is suitable for a variety of high current and high voltage applications, providing efficient and stable power management and power switching functions, especially in industrial and automotive electronics that require high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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