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HY3010D-VB Product details
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HY3010D-VB Product Introduction
HY3010D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Utilizing advanced Trench technology, this MOSFET provides low on-resistance and high current handling capability, suitable for electronic applications requiring high efficiency and high power density. Its superior performance enables it to perform well in a variety of demanding power management and power conversion applications.
HY3010D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Utilizing advanced Trench technology, this MOSFET provides low on-resistance and high current handling capability, suitable for electronic applications requiring high efficiency and high power density. Its superior performance enables it to perform well in a variety of demanding power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HY3010D-VB parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, switching power supply, load switch, DC-DC converter
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, switching power supply, load switch, DC-DC converter
Domain and module applications：
Application areas and modules of HY3010D-VB
1. **Efficient power management**: The low on-resistance and high current carrying capacity of HY3010D-VB make it very suitable for use in efficient power management systems such as switching power supplies and power distribution modules, which can reduce power consumption and improve system efficiency.
2. **Switching power supply (SMPS)**: In switching power supply design, HY3010D-VB can effectively reduce switching losses and heat, improve power conversion efficiency, and is very suitable for applications that require high power handling.
3. **DC-DC converter**: This MOSFET is widely used in DC-DC converters. Its excellent current handling capability and low RDS(ON) value help improve voltage conversion efficiency and ensure stable power output.
4. **Motor control**: Due to its high current carrying capacity, HY3010D-VB is suitable for motor drive applications, which can effectively manage current and reduce power consumption, providing reliable motor control.
5. **Automotive Electronics**: In automotive electronic systems, such as power management units and electric control systems, the high voltage tolerance and high performance of the HY3010D-VB can support complex electrical systems and ensure high reliability.
1. **Efficient power management**: The low on-resistance and high current carrying capacity of HY3010D-VB make it very suitable for use in efficient power management systems such as switching power supplies and power distribution modules, which can reduce power consumption and improve system efficiency.
2. **Switching power supply (SMPS)**: In switching power supply design, HY3010D-VB can effectively reduce switching losses and heat, improve power conversion efficiency, and is very suitable for applications that require high power handling.
3. **DC-DC converter**: This MOSFET is widely used in DC-DC converters. Its excellent current handling capability and low RDS(ON) value help improve voltage conversion efficiency and ensure stable power output.
4. **Motor control**: Due to its high current carrying capacity, HY3010D-VB is suitable for motor drive applications, which can effectively manage current and reduce power consumption, providing reliable motor control.
5. **Automotive Electronics**: In automotive electronic systems, such as power management units and electric control systems, the high voltage tolerance and high performance of the HY3010D-VB can support complex electrical systems and ensure high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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