HY3008B-VB Product details
Product introduction:
HY3008B-VB is a high-performance single N-channel MOSFET in TO263 package. The device is based on advanced trench technology and is designed to handle applications with high current and low conduction losses. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a gate voltage of 4.5V, its on-resistance (RDS(ON)) is 10mΩ, which decreases to 6mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 120A. The high current carrying capability and low on-resistance of the HY3008B-VB enable it to excel in high-efficiency switching and power management applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package Type**: TO263
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology Type**: Trench
- **Typical Operating Temperature Range**: -55°C to 150°C
Domain and module applications:
1. **High-efficiency DC-DC converters**
In high-efficiency DC-DC converters, the low on-resistance and high current handling capability of the HY3008B-VB can significantly improve conversion efficiency. It reduces switching losses and power consumption, ensures stable operation under high current conditions, and is suitable for power modules and power management systems.
2. **Electric vehicle drive system**
For the drive system of electric vehicles, the high current carrying capacity and low on-resistance of the HY3008B-VB enable it to effectively control high current loads in the motor drive module. It improves the overall power performance and energy efficiency of electric vehicles.
3. **Solar inverter**
In solar inverters, the high efficiency and low conduction loss characteristics of this MOSFET help optimize the conversion process of DC to AC. It reduces energy losses and improves the overall performance and reliability of the inverter.
4. **Industrial Power Management**
In industrial power management systems, the high current handling capability and low power consumption of the HY3008B-VB make it suitable for use in switching power supplies and current management modules. This ensures stable operation and high performance of industrial equipment.
With its high current carrying capability and low power consumption, the HY3008B-VB is widely used in power management and switching applications that require efficient switching and stable performance, such as DC-DC converters, electric vehicle drive systems, solar inverters, and industrial power management.
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