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HY3003D-VB Product details
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Product Introduction:
HY3003D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. The device has a drain-source breakdown voltage of 30V and is suitable for medium voltage range switching and power conversion applications. Its on-resistance is as low as 2mΩ (at VGS=10V) and 3mΩ (at VGS=4.5V), which enables it to effectively reduce power loss and improve system efficiency under high current conditions. HY3003D-VB uses advanced trench technology, providing excellent switching performance and stability, and is an ideal choice for applications requiring high performance and reliability.
HY3003D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. The device has a drain-source breakdown voltage of 30V and is suitable for medium voltage range switching and power conversion applications. Its on-resistance is as low as 2mΩ (at VGS=10V) and 3mΩ (at VGS=4.5V), which enables it to effectively reduce power loss and improve system efficiency under high current conditions. HY3003D-VB uses advanced trench technology, providing excellent switching performance and stability, and is an ideal choice for applications requiring high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Model**: HY3003D-VB
- **Package**: TO252
- **Polarity**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: HY3003D-VB
- **Package**: TO252
- **Polarity**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and modules:
1. **Power management and switching power supply**: The low on-resistance (2mΩ@VGS=10V) and high current capability (100A) of the HY3003D-VB make it ideal for use in efficient power management systems, including switch mode power supplies (SMPS) and DC-DC converters. In these applications, the MOSFET can effectively reduce energy loss and improve the overall efficiency of the power system, and is particularly suitable for use in high-efficiency power adapters and power modules.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**: Due to its high current handling capability and low on-resistance, the HY3003D-VB performs well in electric vehicles and battery management systems. In battery charge and discharge control and power management, it can provide stable switching performance and efficient current control to ensure battery safety and efficient operation of the system.
3. **High power switch**: The HY3003D-VB is suitable for high power switching applications such as motor drives and power amplifiers. Its low on-resistance and high current capability enable it to withstand large current loads and provide stable switching performance, and is widely used in motor control systems for industrial automation equipment and power tools.
4. **LED Driver and Lighting System**: In LED drivers and lighting systems, HY3003D-VB can be used as an efficient switching element. Its low on-resistance helps reduce power loss and is suitable for high-power LED lighting applications such as power conversion and switching control in automotive headlights and interior lighting systems.
The low on-resistance and high current capability of HY3003D-VB enable it to excel in a variety of applications requiring high efficiency and high reliability, and is a key high-performance MOSFET choice in modern power management and power control systems.
1. **Power management and switching power supply**: The low on-resistance (2mΩ@VGS=10V) and high current capability (100A) of the HY3003D-VB make it ideal for use in efficient power management systems, including switch mode power supplies (SMPS) and DC-DC converters. In these applications, the MOSFET can effectively reduce energy loss and improve the overall efficiency of the power system, and is particularly suitable for use in high-efficiency power adapters and power modules.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**: Due to its high current handling capability and low on-resistance, the HY3003D-VB performs well in electric vehicles and battery management systems. In battery charge and discharge control and power management, it can provide stable switching performance and efficient current control to ensure battery safety and efficient operation of the system.
3. **High power switch**: The HY3003D-VB is suitable for high power switching applications such as motor drives and power amplifiers. Its low on-resistance and high current capability enable it to withstand large current loads and provide stable switching performance, and is widely used in motor control systems for industrial automation equipment and power tools.
4. **LED Driver and Lighting System**: In LED drivers and lighting systems, HY3003D-VB can be used as an efficient switching element. Its low on-resistance helps reduce power loss and is suitable for high-power LED lighting applications such as power conversion and switching control in automotive headlights and interior lighting systems.
The low on-resistance and high current capability of HY3003D-VB enable it to excel in a variety of applications requiring high efficiency and high reliability, and is a key high-performance MOSFET choice in modern power management and power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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