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HY3003B-VB Product details
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1. HY3003B-VB Product Introduction
HY3003B-VB is a single N-channel power MOSFET in TO263 package, designed for high current and low power consumption applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)). At VGS=4.5V, the on-resistance is 2.7mΩ, and at VGS=10V it is 2.4mΩ, capable of handling a continuous drain current of up to 98A. Its gate threshold voltage (Vth) is 1.7V, making it perform well in a variety of high-efficiency current applications.
HY3003B-VB is a single N-channel power MOSFET in TO263 package, designed for high current and low power consumption applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)). At VGS=4.5V, the on-resistance is 2.7mΩ, and at VGS=10V it is 2.4mΩ, capable of handling a continuous drain current of up to 98A. Its gate threshold voltage (Vth) is 1.7V, making it perform well in a variety of high-efficiency current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HY3003B-VB Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. HY3003B-VB Application Fields and Modules
The high current handling capability and extremely low on-resistance of HY3003B-VB make it very suitable for the following fields and modules:
1. **Power Management**: In high-performance DC-DC converters and AC-DC power modules, HY3003B-VB can achieve efficient power conversion and current control, reduce power consumption, and improve system efficiency.
2. **Electric Vehicle**: Suitable for battery management systems and motor drive modules in electric vehicles, this MOSFET can handle currents up to 98A, ensuring high efficiency and stability of electric vehicle systems.
3. **Computer and Server Power**: In power supply modules for computers and servers, HY3003B-VB provides stable current handling capabilities, can effectively manage high-power loads, and improve the overall efficiency and reliability of the power supply.
4. **Industrial power systems**: This MOSFET can be used in a variety of industrial power applications, including power distribution, load driving, and power control, especially where high current and low power consumption are required.
5. **Communication equipment**: In the power modules of communication equipment, HY3003B-VB effectively improves the performance and energy efficiency of the equipment by providing low on-resistance and high current handling capability.
The high current handling capability and extremely low on-resistance of HY3003B-VB make it very suitable for the following fields and modules:
1. **Power Management**: In high-performance DC-DC converters and AC-DC power modules, HY3003B-VB can achieve efficient power conversion and current control, reduce power consumption, and improve system efficiency.
2. **Electric Vehicle**: Suitable for battery management systems and motor drive modules in electric vehicles, this MOSFET can handle currents up to 98A, ensuring high efficiency and stability of electric vehicle systems.
3. **Computer and Server Power**: In power supply modules for computers and servers, HY3003B-VB provides stable current handling capabilities, can effectively manage high-power loads, and improve the overall efficiency and reliability of the power supply.
4. **Industrial power systems**: This MOSFET can be used in a variety of industrial power applications, including power distribution, load driving, and power control, especially where high current and low power consumption are required.
5. **Communication equipment**: In the power modules of communication equipment, HY3003B-VB effectively improves the performance and energy efficiency of the equipment by providing low on-resistance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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