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HY2N7002E-VB Product details
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HY2N7002E-VB Product Introduction
HY2N7002E-VB is a high-performance single N-channel MOSFET in SOT23-3 package, designed for low power and high efficiency applications. It uses Trench technology to provide low on-resistance and stable current handling capability. The design of this MOSFET makes it perform well in various electronic devices, especially suitable for applications that require small package and high efficiency.
HY2N7002E-VB is a high-performance single N-channel MOSFET in SOT23-3 package, designed for low power and high efficiency applications. It uses Trench technology to provide low on-resistance and stable current handling capability. The design of this MOSFET makes it perform well in various electronic devices, especially suitable for applications that require small package and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
HY2N7002E-VB parameter description
- **Package type**: SOT23-3
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Typical applications**: Low power switch, load switch, small power management
- **Package type**: SOT23-3
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Typical applications**: Low power switch, load switch, small power management
Domain and module applications：
Applications and modules of HY2N7002E-VB
1. **Low-power switch**: Due to its small package and low on-resistance, HY2N7002E-VB is suitable for various low-power switch applications, such as switch control in portable electronic devices, which can effectively manage small current loads.
2. **Load switch**: This MOSFET performs well in low-current load switching applications, such as load switches in consumer electronics, providing reliable current control and reducing energy losses.
3. **Small power management**: The high efficiency and small package of HY2N7002E-VB make it suitable for use in small power management modules, such as power switching and regulation in handheld devices and sensors.
4. **Portable devices**: In smartphones, tablets and other portable electronic products, the small package and good electrical performance of HY2N7002E-VB can effectively support the high-efficiency and compact design requirements of the equipment.
5. **Low power circuit**: Suitable for low power circuits and small electronic modules, such as LED drive circuits and low voltage logic circuits, and can provide stable switching performance and long-term reliable operation.
1. **Low-power switch**: Due to its small package and low on-resistance, HY2N7002E-VB is suitable for various low-power switch applications, such as switch control in portable electronic devices, which can effectively manage small current loads.
2. **Load switch**: This MOSFET performs well in low-current load switching applications, such as load switches in consumer electronics, providing reliable current control and reducing energy losses.
3. **Small power management**: The high efficiency and small package of HY2N7002E-VB make it suitable for use in small power management modules, such as power switching and regulation in handheld devices and sensors.
4. **Portable devices**: In smartphones, tablets and other portable electronic products, the small package and good electrical performance of HY2N7002E-VB can effectively support the high-efficiency and compact design requirements of the equipment.
5. **Low power circuit**: Suitable for low power circuits and small electronic modules, such as LED drive circuits and low voltage logic circuits, and can provide stable switching performance and long-term reliable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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