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HY19P03D-VB Product details
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1. HY19P03D-VB Product Introduction
HY19P03D-VB is a high-performance single P-channel MOSFET in TO263 package. Based on advanced trench technology, the device is designed for applications that require high performance and low conduction losses. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of -3V. At a gate voltage of 4.5V, the on-resistance (RDS(ON)) of HY19P03D-VB is 6.25mΩ, which decreases to 5mΩ at 10V, supporting a maximum drain current (ID) of -100A. Its high current carrying capacity and low on-resistance enable it to perform well in low voltage and high current scenarios, suitable for a variety of power management and switching applications.
HY19P03D-VB is a high-performance single P-channel MOSFET in TO263 package. Based on advanced trench technology, the device is designed for applications that require high performance and low conduction losses. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of -3V. At a gate voltage of 4.5V, the on-resistance (RDS(ON)) of HY19P03D-VB is 6.25mΩ, which decreases to 5mΩ at 10V, supporting a maximum drain current (ID) of -100A. Its high current carrying capacity and low on-resistance enable it to perform well in low voltage and high current scenarios, suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. HY19P03D-VB detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 6.25mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -100A
- **Technology type**: Trench
- **Typical operating temperature range**: -55°C to 150°C
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 6.25mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -100A
- **Technology type**: Trench
- **Typical operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
1. **Power switch control**
In the power switch control module, HY19P03D-VB can efficiently control the switching of the power supply with its low on-resistance and high current handling capability, reduce energy loss and improve overall efficiency. It is suitable for power management applications that require high current switching and low power consumption.
2. **Electric vehicle power management**
In the power management system of electric vehicles, this MOSFET can stably handle load current and switch efficiently. Its high current carrying capacity and low on-resistance characteristics make it very suitable for battery management and motor drive control in electric vehicles.
3. **Power inverter**
HY19P03D-VB is suitable for switching components in power inverters. Its high efficiency and low on-resistance characteristics can effectively handle power conversion in the inverter, ensuring high efficiency and reliability of the equipment.
4. **High-efficiency DC-DC converter**
In high-efficiency DC-DC converters, the low on-resistance and high current handling capability of HY19P03D-VB help improve conversion efficiency, reduce power loss, and ensure a stable and efficient voltage conversion process.
With its high current handling capability and low conduction loss, HY19P03D-VB is suitable for application scenarios that require efficient switching and stable performance, such as power management, electric vehicle drive systems, power inverters, etc.
1. **Power switch control**
In the power switch control module, HY19P03D-VB can efficiently control the switching of the power supply with its low on-resistance and high current handling capability, reduce energy loss and improve overall efficiency. It is suitable for power management applications that require high current switching and low power consumption.
2. **Electric vehicle power management**
In the power management system of electric vehicles, this MOSFET can stably handle load current and switch efficiently. Its high current carrying capacity and low on-resistance characteristics make it very suitable for battery management and motor drive control in electric vehicles.
3. **Power inverter**
HY19P03D-VB is suitable for switching components in power inverters. Its high efficiency and low on-resistance characteristics can effectively handle power conversion in the inverter, ensuring high efficiency and reliability of the equipment.
4. **High-efficiency DC-DC converter**
In high-efficiency DC-DC converters, the low on-resistance and high current handling capability of HY19P03D-VB help improve conversion efficiency, reduce power loss, and ensure a stable and efficient voltage conversion process.
With its high current handling capability and low conduction loss, HY19P03D-VB is suitable for application scenarios that require efficient switching and stable performance, such as power management, electric vehicle drive systems, power inverters, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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