中文
English
HY1910D-VB Product details
Back to previous pageProduct introduction：
HY1910D-VB MOSFET Product Introduction
HY1910D-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications. It can withstand a maximum drain-source voltage (VDS) of 100V and supports a gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of 2.5V. The on-resistance (RDS(ON)) of HY1910D-VB is 10.5mΩ at VGS=4.5V and 8.5mΩ at VGS=10V, providing excellent low on-resistance and high current handling capability (maximum drain current of 85A). This MOSFET uses advanced trench technology (Trench), which enables it to perform well in high voltage and high current applications, and is suitable for occasions requiring high power and high efficiency.
HY1910D-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications. It can withstand a maximum drain-source voltage (VDS) of 100V and supports a gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of 2.5V. The on-resistance (RDS(ON)) of HY1910D-VB is 10.5mΩ at VGS=4.5V and 8.5mΩ at VGS=10V, providing excellent low on-resistance and high current handling capability (maximum drain current of 85A). This MOSFET uses advanced trench technology (Trench), which enables it to perform well in high voltage and high current applications, and is suitable for occasions requiring high power and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HY1910D-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High voltage power management**: The high drain-source voltage and low on-resistance of the HY1910D-VB make it ideal for use in high voltage DC-DC converters and power distribution modules. These applications require MOSFETs that can handle high voltages and maintain low power consumption to ensure efficient and stable operation of the power system.
2. **Industrial equipment**: In industrial automation and control systems, the HY1910D-VB can be used for high voltage motor drivers and power switches. Its high current carrying capacity and low on-resistance enable it to effectively manage high power currents in industrial equipment while maintaining high efficiency and reliability.
3. **Electric vehicles**: In battery management systems and high voltage power conversion modules in electric vehicles, the high voltage tolerance and low on-resistance of the HY1910D-VB are critical to ensuring the efficiency and safety of the system. This MOSFET can effectively handle currents at high voltages, optimizing the performance and energy efficiency of electric vehicles.
4. **Consumer Electronics**: In some high-power consumer electronics products (such as large battery chargers and high-power adapters), the HY1910D-VB can improve the efficiency of power conversion and reduce energy loss, thereby enhancing the overall performance and reliability of the equipment.
The high voltage and high current handling capabilities of the HY1910D-VB enable it to excel in multiple high-power applications, especially in power management and power control systems that require high performance and reliability.
1. **High voltage power management**: The high drain-source voltage and low on-resistance of the HY1910D-VB make it ideal for use in high voltage DC-DC converters and power distribution modules. These applications require MOSFETs that can handle high voltages and maintain low power consumption to ensure efficient and stable operation of the power system.
2. **Industrial equipment**: In industrial automation and control systems, the HY1910D-VB can be used for high voltage motor drivers and power switches. Its high current carrying capacity and low on-resistance enable it to effectively manage high power currents in industrial equipment while maintaining high efficiency and reliability.
3. **Electric vehicles**: In battery management systems and high voltage power conversion modules in electric vehicles, the high voltage tolerance and low on-resistance of the HY1910D-VB are critical to ensuring the efficiency and safety of the system. This MOSFET can effectively handle currents at high voltages, optimizing the performance and energy efficiency of electric vehicles.
4. **Consumer Electronics**: In some high-power consumer electronics products (such as large battery chargers and high-power adapters), the HY1910D-VB can improve the efficiency of power conversion and reduce energy loss, thereby enhancing the overall performance and reliability of the equipment.
The high voltage and high current handling capabilities of the HY1910D-VB enable it to excel in multiple high-power applications, especially in power management and power control systems that require high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
