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HY1908MF-VB Product details
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1. HY1908MF-VB Product Introduction
HY1908MF-VB is a single N-channel power MOSFET in a TO220F package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced Trench technology and has a low on-resistance (RDS(ON)), which is 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V. Its gate threshold voltage (Vth) is 3V and the maximum continuous drain current is 75A. These features make the HY1908MF-VB perform well in applications that require efficient current handling and low power consumption.
HY1908MF-VB is a single N-channel power MOSFET in a TO220F package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. This MOSFET uses advanced Trench technology and has a low on-resistance (RDS(ON)), which is 8.7mΩ at VGS=4.5V and 6.4mΩ at VGS=10V. Its gate threshold voltage (Vth) is 3V and the maximum continuous drain current is 75A. These features make the HY1908MF-VB perform well in applications that require efficient current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. HY1908MF-VB Detailed parameter description
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. HY1908MF-VB Application Fields and Modules
The high current handling capability and low on-resistance of HY1908MF-VB make it very suitable for the following fields and modules:
1. **Power Management**: In DC-DC converters and AC-DC power modules, the low RDS(ON) value and high current capability of HY1908MF-VB can significantly improve the efficiency of the power supply and reduce power consumption.
2. **Electric Vehicle**: In the battery management system and motor drive module of electric vehicles, this MOSFET can handle currents up to 75A, which is suitable for power conversion and control of electric vehicles, improving the overall efficiency and performance of the system.
3. **Industrial Power System**: For industrial power systems that require high power and high reliability, HY1908MF-VB provides stable current handling capabilities, which is suitable for power distribution, load drive and other scenarios.
4. **Computer and server power supply**: This MOSFET can be used in the power supply module of computers and servers to ensure efficient power management, stable power supply and reduce power consumption, and improve system stability and reliability.
5. **Communication equipment**: HY1908MF-VB is suitable for power modules and power amplifiers in communication equipment, helping to achieve efficient power conversion and control, and meet the needs of high power and low energy consumption.
The high current handling capability and low on-resistance of HY1908MF-VB make it very suitable for the following fields and modules:
1. **Power Management**: In DC-DC converters and AC-DC power modules, the low RDS(ON) value and high current capability of HY1908MF-VB can significantly improve the efficiency of the power supply and reduce power consumption.
2. **Electric Vehicle**: In the battery management system and motor drive module of electric vehicles, this MOSFET can handle currents up to 75A, which is suitable for power conversion and control of electric vehicles, improving the overall efficiency and performance of the system.
3. **Industrial Power System**: For industrial power systems that require high power and high reliability, HY1908MF-VB provides stable current handling capabilities, which is suitable for power distribution, load drive and other scenarios.
4. **Computer and server power supply**: This MOSFET can be used in the power supply module of computers and servers to ensure efficient power management, stable power supply and reduce power consumption, and improve system stability and reliability.
5. **Communication equipment**: HY1908MF-VB is suitable for power modules and power amplifiers in communication equipment, helping to achieve efficient power conversion and control, and meet the needs of high power and low energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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