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HY1908D-VB Product details
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HY1908D-VB Product Introduction
HY1908D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. It uses Trench technology to provide extremely low on-resistance and high current handling capability, suitable for efficient power management and power conversion applications. Its superior conductivity and stable operating characteristics enable it to maintain excellent performance in a variety of harsh environments.
HY1908D-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. It uses Trench technology to provide extremely low on-resistance and high current handling capability, suitable for efficient power management and power conversion applications. Its superior conductivity and stable operating characteristics enable it to maintain excellent performance in a variety of harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HY1908D-VB parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, switching power supply, load switch, DC-DC converter
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Typical applications**: High-efficiency power management, switching power supply, load switch, DC-DC converter
Domain and module applications：
Application fields and modules of HY1908D-VB
1. **Switching Power Supply (SMPS)**: The low on-resistance and high current carrying capacity of HY1908D-VB make it very suitable for use in efficient switching power supply designs. It can effectively reduce switching losses, improve power conversion efficiency, and is suitable for various high power density power supply applications.
2. **DC-DC Converter**: This MOSFET can provide stable current handling in DC-DC converter modules, ensuring efficient voltage conversion and power supply, and is particularly suitable for application scenarios that require high current and high efficiency.
3. **Motor Control**: The high current handling capability and low RDS(ON) value of HY1908D-VB make it excellent in motor drive applications, which can effectively reduce power consumption and heat, and provide reliable motor control and drive.
4. **Automotive electronics**: In automotive electronic systems, such as power management units and electric drive systems, the high voltage withstand capability and excellent conductivity of the HY1908D-VB can support complex electrical systems and provide high reliability.
5. **Load switch applications**: This MOSFET can be used as an efficient load switch element and performs well in load applications that require fast switching and high current, such as in power switches and load protection modules.
1. **Switching Power Supply (SMPS)**: The low on-resistance and high current carrying capacity of HY1908D-VB make it very suitable for use in efficient switching power supply designs. It can effectively reduce switching losses, improve power conversion efficiency, and is suitable for various high power density power supply applications.
2. **DC-DC Converter**: This MOSFET can provide stable current handling in DC-DC converter modules, ensuring efficient voltage conversion and power supply, and is particularly suitable for application scenarios that require high current and high efficiency.
3. **Motor Control**: The high current handling capability and low RDS(ON) value of HY1908D-VB make it excellent in motor drive applications, which can effectively reduce power consumption and heat, and provide reliable motor control and drive.
4. **Automotive electronics**: In automotive electronic systems, such as power management units and electric drive systems, the high voltage withstand capability and excellent conductivity of the HY1908D-VB can support complex electrical systems and provide high reliability.
5. **Load switch applications**: This MOSFET can be used as an efficient load switch element and performs well in load applications that require fast switching and high current, such as in power switches and load protection modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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