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HY1908B-VB Product details
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1. HY1908B-VB Product Introduction
HY1908B-VB is a high-performance single N-channel MOSFET in TO263 package. The device is based on advanced trench technology and is designed for high current and low conduction loss applications. Its drain-source voltage (VDS) is 80V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 3V. HY1908B-VB has an on-resistance (RDS(ON)) of 10mΩ at a gate voltage of 4.5V, which drops to 6mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to 120A. Its high current carrying capability and low on-resistance make it an ideal choice for high-efficiency switching and power management applications.
HY1908B-VB is a high-performance single N-channel MOSFET in TO263 package. The device is based on advanced trench technology and is designed for high current and low conduction loss applications. Its drain-source voltage (VDS) is 80V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 3V. HY1908B-VB has an on-resistance (RDS(ON)) of 10mΩ at a gate voltage of 4.5V, which drops to 6mΩ at a gate voltage of 10V, supporting a drain current (ID) of up to 120A. Its high current carrying capability and low on-resistance make it an ideal choice for high-efficiency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. HY1908B-VB Detailed Parameters
- **Package Type**: TO263
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology Type**: Trench
- **Typical Operating Temperature Range**: -55°C to 150°C
- **Package Type**: TO263
- **Configuration**: Single N-channel
- **Drain-Source Voltage (VDS)**: 80V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 120A
- **Technology Type**: Trench
- **Typical Operating Temperature Range**: -55°C to 150°C
Domain and module applications：
III. Application fields and module examples
1. **High-power DC-DC converters**
In high-power DC-DC converters, the low on-resistance and high current handling capability of the HY1908B-VB can significantly reduce energy loss and improve overall conversion efficiency. This is especially important for power management systems that require high power conversion and high efficiency.
2. **Electric vehicle drive control**
This MOSFET is very suitable for use in the drive control system of electric vehicles. Due to its high current carrying capacity and low on-resistance, it can effectively control high current loads in the motor drive module of electric vehicles, improving the performance and reliability of the system.
3. **Industrial power management**
In industrial power management systems, the high efficiency and high current handling capability of the HY1908B-VB make it an ideal choice for switching power supplies and current management modules. It can work stably under high load conditions to ensure the reliable operation of industrial equipment.
4. **Solar Inverter**
In solar inverters, HY1908B-VB can effectively handle the conversion of solar DC power, and its low on-resistance helps reduce energy loss, thereby improving the overall performance of the inverter. The high current carrying capacity enables it to maintain stability under high power output.
With its high current handling capability and low power consumption, HY1908B-VB is suitable for a variety of application scenarios that require efficient switching and high current carrying, especially in the field of power management and drive control.
1. **High-power DC-DC converters**
In high-power DC-DC converters, the low on-resistance and high current handling capability of the HY1908B-VB can significantly reduce energy loss and improve overall conversion efficiency. This is especially important for power management systems that require high power conversion and high efficiency.
2. **Electric vehicle drive control**
This MOSFET is very suitable for use in the drive control system of electric vehicles. Due to its high current carrying capacity and low on-resistance, it can effectively control high current loads in the motor drive module of electric vehicles, improving the performance and reliability of the system.
3. **Industrial power management**
In industrial power management systems, the high efficiency and high current handling capability of the HY1908B-VB make it an ideal choice for switching power supplies and current management modules. It can work stably under high load conditions to ensure the reliable operation of industrial equipment.
4. **Solar Inverter**
In solar inverters, HY1908B-VB can effectively handle the conversion of solar DC power, and its low on-resistance helps reduce energy loss, thereby improving the overall performance of the inverter. The high current carrying capacity enables it to maintain stability under high power output.
With its high current handling capability and low power consumption, HY1908B-VB is suitable for a variety of application scenarios that require efficient switching and high current carrying, especially in the field of power management and drive control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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