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HY1906P-VB Product details

Product introduction:

1. HY1906P-VB Product Introduction

HY1906P-VB is a single N-channel MOSFET in TO220F package, designed for high-power applications. Its 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) enable it to handle large currents, with a maximum drain current (ID) of 120A. HY1906P-VB's Trench technology provides low on-resistance, especially at high gate-source voltages, which can significantly reduce power losses. This MOSFET is suitable for a variety of high-current and high-power switching applications, and is an ideal choice for power management, power amplification, and drive modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. HY1906P-VB Detailed Parameters

1. **Package Type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-Source Voltage (VDS)**: 60V
4. **Gate-Source Voltage (VGS)**: ±20V
5. **Threshold Voltage (Vth)**: 3V
6. **On-Resistance (RDS(ON))**:
- 13mΩ@VGS=4.5V
- 5mΩ@VGS=10V
7. **Drain Current (ID)**: 120A
8. **Technology**: Trench
9. **Operating Temperature Range**: -55°C to +175°C
10. **Power consumption**: Suitable for high power applications (the specific power consumption depends on the heat dissipation conditions and actual working conditions)
11. **Maximum pulse current**: 360A (10us)

Domain and module applications:

III. Application fields and module examples

1. **High-power switching power supply**: The high current carrying capacity and low on-resistance of HY1906P-VB make it very suitable for high-power switching power supply applications. In these power supplies, this MOSFET can significantly reduce power loss and improve system efficiency. It is often used in industrial power supplies, computer power supplies, and high-power chargers.

2. **DC-DC converter**: Due to its excellent current handling capability and low RDS(ON), HY1906P-VB is also very suitable for DC-DC converters. It can provide efficient current conduction during the conversion process and is suitable for server power supplies, communication equipment power modules, and various power management systems.

3. **Electric vehicle drive module**: The high current capability of this MOSFET makes it an ideal choice for motor drive and battery management systems in electric vehicles. It can efficiently handle high current loads in motor drives and ensure stable operation of electric vehicles under high load conditions.

4. **Inverter and Uninterruptible Power Supply (UPS)**: HY1906P-VB is suitable for inverter and UPS systems, providing efficient power conversion and stable output performance in these applications, ensuring the reliability and efficiency of the system under various operating conditions.

The design and performance of HY1906P-VB make it excel in applications requiring high current and high efficiency, and it is widely used in power management and power drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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