HY1906P-VB Product details
Product introduction:
HY1906P-VB is a single N-channel MOSFET in TO220F package, designed for high-power applications. Its 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) enable it to handle large currents, with a maximum drain current (ID) of 120A. HY1906P-VB's Trench technology provides low on-resistance, especially at high gate-source voltages, which can significantly reduce power losses. This MOSFET is suitable for a variety of high-current and high-power switching applications, and is an ideal choice for power management, power amplification, and drive modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
1. **Package Type**: TO220F
2. **Configuration**: Single N-channel
3. **Drain-Source Voltage (VDS)**: 60V
4. **Gate-Source Voltage (VGS)**: ±20V
5. **Threshold Voltage (Vth)**: 3V
6. **On-Resistance (RDS(ON))**:
- 13mΩ@VGS=4.5V
- 5mΩ@VGS=10V
7. **Drain Current (ID)**: 120A
8. **Technology**: Trench
9. **Operating Temperature Range**: -55°C to +175°C
10. **Power consumption**: Suitable for high power applications (the specific power consumption depends on the heat dissipation conditions and actual working conditions)
11. **Maximum pulse current**: 360A (10us)
Domain and module applications:
1. **High-power switching power supply**: The high current carrying capacity and low on-resistance of HY1906P-VB make it very suitable for high-power switching power supply applications. In these power supplies, this MOSFET can significantly reduce power loss and improve system efficiency. It is often used in industrial power supplies, computer power supplies, and high-power chargers.
2. **DC-DC converter**: Due to its excellent current handling capability and low RDS(ON), HY1906P-VB is also very suitable for DC-DC converters. It can provide efficient current conduction during the conversion process and is suitable for server power supplies, communication equipment power modules, and various power management systems.
3. **Electric vehicle drive module**: The high current capability of this MOSFET makes it an ideal choice for motor drive and battery management systems in electric vehicles. It can efficiently handle high current loads in motor drives and ensure stable operation of electric vehicles under high load conditions.
4. **Inverter and Uninterruptible Power Supply (UPS)**: HY1906P-VB is suitable for inverter and UPS systems, providing efficient power conversion and stable output performance in these applications, ensuring the reliability and efficiency of the system under various operating conditions.
The design and performance of HY1906P-VB make it excel in applications requiring high current and high efficiency, and it is widely used in power management and power drive modules.
Technical support:
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