中文
English
HY1906B-VB Product details
Back to previous pageProduct introduction：
HY1906B-VB MOSFET Product Introduction
HY1906B-VB is a single N-channel MOSFET in TO263 package, designed for high power density and high efficiency applications. The MOSFET supports a maximum drain-source voltage (VDS) of 60V, a gate-source voltage range of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 4mΩ at VGS=10V, allowing it to handle a maximum drain current (ID) of up to 150A. Using advanced trench technology, the HY1906B-VB provides excellent current handling capability and low power consumption, suitable for demanding electronic and power management systems.
HY1906B-VB is a single N-channel MOSFET in TO263 package, designed for high power density and high efficiency applications. The MOSFET supports a maximum drain-source voltage (VDS) of 60V, a gate-source voltage range of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 4mΩ at VGS=10V, allowing it to handle a maximum drain current (ID) of up to 150A. Using advanced trench technology, the HY1906B-VB provides excellent current handling capability and low power consumption, suitable for demanding electronic and power management systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
HY1906B-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-power power management**: The high drain current capability and low on-resistance of the HY1906B-VB make it ideal for high-power power management systems such as DC-DC converters and power distribution modules. These systems need to handle large currents and have strict requirements on power loss. The characteristics of the HY1906B-VB can significantly improve system efficiency and reliability.
2. **Electric vehicles**: In the motor control system of electric vehicles, the HY1906B-VB is capable of handling currents up to 150A and is suitable for motor drive and power conversion. This MOSFET can provide efficient switching capabilities in the power system of electric vehicles, thereby optimizing the performance and endurance of the motor.
3. **Industrial applications**: In industrial automation and control systems, the HY1906B-VB can be used in motor drives, switching power supplies, and high-power switching applications. Its high current handling capability and low on-resistance ensure high efficiency and stability of the system, suitable for environments requiring high efficiency and low heat.
4. **Consumer Electronics**: In high-power consumer electronics (such as power adapters for high-performance laptops), the low on-resistance and high current capability of the HY1906B-VB help improve charging efficiency and overall device performance, providing users with a more efficient and reliable power supply solution.
The excellent performance of the HY1906B-VB makes it play an important role in multiple application fields, especially in situations where high power and high efficiency are required.
1. **High-power power management**: The high drain current capability and low on-resistance of the HY1906B-VB make it ideal for high-power power management systems such as DC-DC converters and power distribution modules. These systems need to handle large currents and have strict requirements on power loss. The characteristics of the HY1906B-VB can significantly improve system efficiency and reliability.
2. **Electric vehicles**: In the motor control system of electric vehicles, the HY1906B-VB is capable of handling currents up to 150A and is suitable for motor drive and power conversion. This MOSFET can provide efficient switching capabilities in the power system of electric vehicles, thereby optimizing the performance and endurance of the motor.
3. **Industrial applications**: In industrial automation and control systems, the HY1906B-VB can be used in motor drives, switching power supplies, and high-power switching applications. Its high current handling capability and low on-resistance ensure high efficiency and stability of the system, suitable for environments requiring high efficiency and low heat.
4. **Consumer Electronics**: In high-power consumer electronics (such as power adapters for high-performance laptops), the low on-resistance and high current capability of the HY1906B-VB help improve charging efficiency and overall device performance, providing users with a more efficient and reliable power supply solution.
The excellent performance of the HY1906B-VB makes it play an important role in multiple application fields, especially in situations where high power and high efficiency are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
