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HY1904D-VB Product details
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1. HY1904D-VB Product Introduction
HY1904D-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. This MOSFET adopts advanced Trench technology and has an extremely low on-resistance (RDS(ON)), which is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V. Its gate threshold voltage (Vth) is 2.5V and the maximum continuous drain current is 85A. HY1904D-VB is designed for high-efficiency, high-current applications, especially in situations where high conductivity and low power consumption are required.
HY1904D-VB is a single N-channel power MOSFET in TO252 package with a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. This MOSFET adopts advanced Trench technology and has an extremely low on-resistance (RDS(ON)), which is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V. Its gate threshold voltage (Vth) is 2.5V and the maximum continuous drain current is 85A. HY1904D-VB is designed for high-efficiency, high-current applications, especially in situations where high conductivity and low power consumption are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HY1904D-VB Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
III. HY1904D-VB Application Fields and Modules
The high current capability and low on-resistance of the HY1904D-VB MOSFET make it very suitable for the following application fields and modules:
1. **Power Conversion**: Due to its low RDS(ON) value and high current handling capability, the HY1904D-VB is suitable for power conversion modules such as DC-DC converters and inverters, which can significantly improve power efficiency and reduce power consumption.
2. **Electric Vehicles and Motor Drives**: The MOSFET is capable of handling currents up to 85A, which is very suitable for the motor drive system and battery management system of electric vehicles, providing efficient power conversion and control for electric vehicles.
3. **Computer and Server Power**: In the power supply modules of computers and servers, the HY1904D-VB can be used as a switching element to help achieve efficient power management and improve system stability and reliability.
4. **Industrial Power Systems**: In various industrial applications such as power distribution, load driving, and current control, the high current handling capability and low on-resistance of the HY1904D-VB make it an ideal choice.
5. **Communication Equipment**: In communication equipment that requires high power and high efficiency, the HY1904D-VB can be used in power modules and power amplifiers to ensure high performance and low energy consumption of the equipment.
The high current capability and low on-resistance of the HY1904D-VB MOSFET make it very suitable for the following application fields and modules:
1. **Power Conversion**: Due to its low RDS(ON) value and high current handling capability, the HY1904D-VB is suitable for power conversion modules such as DC-DC converters and inverters, which can significantly improve power efficiency and reduce power consumption.
2. **Electric Vehicles and Motor Drives**: The MOSFET is capable of handling currents up to 85A, which is very suitable for the motor drive system and battery management system of electric vehicles, providing efficient power conversion and control for electric vehicles.
3. **Computer and Server Power**: In the power supply modules of computers and servers, the HY1904D-VB can be used as a switching element to help achieve efficient power management and improve system stability and reliability.
4. **Industrial Power Systems**: In various industrial applications such as power distribution, load driving, and current control, the high current handling capability and low on-resistance of the HY1904D-VB make it an ideal choice.
5. **Communication Equipment**: In communication equipment that requires high power and high efficiency, the HY1904D-VB can be used in power modules and power amplifiers to ensure high performance and low energy consumption of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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