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HY1807P-VB Product details

Product introduction:

1. HY1807P-VB Product Introduction

HY1807P-VB is a single N-channel MOSFET in TO263 package, designed for high current and high voltage applications. This MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and can operate stably at a drain current (ID) of up to 120A. Its low on-resistance (RDS(ON)) performs well at different gate-source voltages, and can provide efficient current conduction capability, making it suitable for power systems and drive modules with strict power loss requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
II. HY1807P-VB Detailed Parameters

1. **Package Type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-Source Voltage (VDS)**: 80V
4. **Gate-Source Voltage (VGS)**: ±20V
5. **Threshold Voltage (Vth)**: 3V
6. **On-Resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
7. **Drain Current (ID)**: 120A
8. **Technology**: Trench
9. **Operating Temperature Range**: -55°C to +175°C
10. **Power Consumption**: Suitable for high-power applications (the specific power consumption depends on the heat dissipation conditions and actual working conditions)
11. **Maximum pulse current**: 320A (10us)

Domain and module applications:

III. Application fields and module examples

1. **High-power switching power supply**: The low on-resistance and high current capability of HY1807P-VB make it an ideal choice for high-power switching power supply. In these applications, the high efficiency of MOSFET can significantly reduce the energy loss in the power conversion process, and is suitable for industrial power supply, computer power supply and battery charger, etc.

2. **DC-DC converter**: In DC-DC converter, HY1807P-VB is able to handle large current loads and provide stable voltage output. Its low RDS(ON) helps to improve conversion efficiency and is widely used in server power modules, automotive electronics and consumer electronics.

3. **Electric vehicle drive module**: Due to its high current carrying capacity and low on-resistance, HY1807P-VB is suitable for motor drive and battery management system of electric vehicles. Its excellent performance ensures efficient and stable operation of electric vehicles under high load conditions.

4. **Inverter and Uninterruptible Power Supply (UPS)**: This MOSFET is also suitable for inverter and UPS systems, in which it can provide efficient power conversion and stable power output, ensuring system reliability and efficiency.

The design of HY1807P-VB makes it suitable for a variety of high-power electronic applications requiring high current and high efficiency, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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