HY1807P-VB Product details
Product introduction:
HY1807P-VB is a single N-channel MOSFET in TO263 package, designed for high current and high voltage applications. This MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and can operate stably at a drain current (ID) of up to 120A. Its low on-resistance (RDS(ON)) performs well at different gate-source voltages, and can provide efficient current conduction capability, making it suitable for power systems and drive modules with strict power loss requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
1. **Package Type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-Source Voltage (VDS)**: 80V
4. **Gate-Source Voltage (VGS)**: ±20V
5. **Threshold Voltage (Vth)**: 3V
6. **On-Resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
7. **Drain Current (ID)**: 120A
8. **Technology**: Trench
9. **Operating Temperature Range**: -55°C to +175°C
10. **Power Consumption**: Suitable for high-power applications (the specific power consumption depends on the heat dissipation conditions and actual working conditions)
11. **Maximum pulse current**: 320A (10us)
Domain and module applications:
1. **High-power switching power supply**: The low on-resistance and high current capability of HY1807P-VB make it an ideal choice for high-power switching power supply. In these applications, the high efficiency of MOSFET can significantly reduce the energy loss in the power conversion process, and is suitable for industrial power supply, computer power supply and battery charger, etc.
2. **DC-DC converter**: In DC-DC converter, HY1807P-VB is able to handle large current loads and provide stable voltage output. Its low RDS(ON) helps to improve conversion efficiency and is widely used in server power modules, automotive electronics and consumer electronics.
3. **Electric vehicle drive module**: Due to its high current carrying capacity and low on-resistance, HY1807P-VB is suitable for motor drive and battery management system of electric vehicles. Its excellent performance ensures efficient and stable operation of electric vehicles under high load conditions.
4. **Inverter and Uninterruptible Power Supply (UPS)**: This MOSFET is also suitable for inverter and UPS systems, in which it can provide efficient power conversion and stable power output, ensuring system reliability and efficiency.
The design of HY1807P-VB makes it suitable for a variety of high-power electronic applications requiring high current and high efficiency, providing excellent performance and reliability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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